Electrical Characterization of Undoped and Boron‐Doped Polycrystalline Diamond Thin Films

AbstractHot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film's volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

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Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films

Journal of Applied Physics ◽

10.1063/1.361119 ◽

1996 ◽

Vol 79 (5) ◽

pp. 2535-2541 ◽

Cited By ~ 24

Author(s):

M. Werner ◽

C. Johnston ◽

P. R. Chalker ◽

S. Romani ◽

I. M. Buckley‐Golder

Keyword(s):

Ohmic Contacts ◽

Diamond Films ◽

Electrical Characterization ◽

Polycrystalline Diamond ◽

Boron Doped

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Electrical characterization of semiconducting diamond thin films and single crystals

Journal of Electronic Materials ◽

10.1007/bf02661667 ◽

1993 ◽

Vol 22 (4) ◽

pp. 391-398 ◽

Cited By ~ 29

Author(s):

J. A. Von Windheim ◽

V. Venkatesan ◽

D. M. Malta ◽

K. Das

Keyword(s):

Thin Films ◽

Single Crystals ◽

Electrical Characterization ◽

Diamond Thin Films ◽

Semiconducting Diamond

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Local impedance imaging of boron-doped polycrystalline diamond thin films

Applied Physics Letters ◽

10.1063/1.4897346 ◽

2014 ◽

Vol 105 (13) ◽

pp. 131908 ◽

Cited By ~ 19

Author(s):

A. Zieliński ◽

R. Bogdanowicz ◽

J. Ryl ◽

L. Burczyk ◽

K. Darowicki

Keyword(s):

Thin Films ◽

Polycrystalline Diamond ◽

Impedance Imaging ◽

Boron Doped ◽

Diamond Thin Films

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Selective growth and characterization of doped polycrystalline diamond thin films

Thin Solid Films ◽

10.1016/0040-6090(93)90407-g ◽

1993 ◽

Vol 229 (1) ◽

pp. 44-50 ◽

Cited By ~ 14

Author(s):

R. Ramesham

Keyword(s):

Thin Films ◽

Polycrystalline Diamond ◽

Selective Growth ◽

Diamond Thin Films

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Characterization of polycrystalline diamond thin films grown on various substrates

Thin Solid Films ◽

10.1016/0040-6090(92)90505-6 ◽

1992 ◽

Vol 212 (1-2) ◽

pp. 96-103 ◽

Cited By ~ 20

Author(s):

R. Ramesham ◽

T. Roppel ◽

R.W. Johnson ◽

J.M. Chang

Keyword(s):

Thin Films ◽

Polycrystalline Diamond ◽

Diamond Thin Films

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Electrical characterization of CVD diamond thin films grown on silicon substrates

Thin Solid Films ◽

10.1016/0040-6090(95)06884-8 ◽

1995 ◽

Vol 270 (1-2) ◽

pp. 189-193 ◽

Cited By ~ 11

Author(s):

A.K. Kulkarni ◽

K. Tey ◽

H. Rodrigo

Keyword(s):

Thin Films ◽

Electrical Characterization ◽

Cvd Diamond ◽

Silicon Substrates ◽

Diamond Thin Films

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Preparation and Characterization of Polycrystalline Chemical Vapor Deposited Boron-doped Diamond Thin Films

Diamond Electrochemistry ◽

10.1016/b978-044451908-5/50004-8 ◽

2005 ◽

pp. 11-25 ◽

Cited By ~ 4

Author(s):

T IVANDINI ◽

Y EINAGA ◽

K HONDA ◽

A FUJISHIMA

Keyword(s):

Thin Films ◽

Chemical Vapor ◽

Boron Doped Diamond ◽

Boron Doped ◽

Chemical Vapor Deposited ◽

Diamond Thin Films

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Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154937 ◽

1989 ◽

Vol 47 ◽

pp. 592-593

Author(s):

J.B. Posthill ◽

R.P. Burns ◽

R.A. Rudder ◽

Y.H. Lee ◽

R.J. Markunas ◽

...

Keyword(s):

Thin Films ◽

Wide Band ◽

Deposition Process ◽

Heteroepitaxial Growth ◽

Electron Microscopic ◽

Wide Band Gap ◽

Lattice Matching ◽

Different Types ◽

Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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