Conductive AFM of Percolative Metal-Insulator Transition in Polycrystalline (La[sub 0.91]Sr[sub 0.09])MnO[sub 3] Thin Films Deposited on Si Substrate

2006 ◽  
Vol 9 (7) ◽  
pp. J27 ◽  
Author(s):  
Yen-Hua Chen ◽  
Shu-Te Ho ◽  
Tai-Bor Wu
2002 ◽  
Vol 81 (2) ◽  
pp. 319-321 ◽  
Author(s):  
A. de Andrés ◽  
S. Taboada ◽  
J. M. Colino ◽  
R. Ramı́rez ◽  
M. Garcı́a-Hernández ◽  
...  

2019 ◽  
Vol 55 (1) ◽  
pp. 99-106
Author(s):  
Xiaofen Guan ◽  
Rongrong Ma ◽  
Guowei Zhou ◽  
Zhiyong Quan ◽  
G. A. Gehring ◽  
...  

2018 ◽  
Vol 115 (38) ◽  
pp. 9515-9520 ◽  
Author(s):  
Zhaoliang Liao ◽  
Nicolas Gauquelin ◽  
Robert J. Green ◽  
Knut Müller-Caspary ◽  
Ivan Lobato ◽  
...  

In transition metal perovskites ABO3, the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes—that is, directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials’ properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal–insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.


2010 ◽  
Vol 24 (27) ◽  
pp. 5451-5456 ◽  
Author(s):  
H. C. JIANG ◽  
W. L. ZHANG ◽  
X. F. CAO ◽  
W. X. ZHANG ◽  
B. PENG

Ag -doped La 0.7 Ca 0.3 MnO 3 (LCMO) films were prepared on silicon substrate by RF magnetron sputtering. The dependences of transport properties on annealing temperature were explored. It is shown that the resistivity of the samples decreases and the metal–insulator transition temperature shifts to higher temperature with the increase in annealing temperature. Two metal–insulator transition temperatures are presented in the R – T plots of Ag -doped LCMO films, which can be explained by the Ag 1+ substitution of La 3+ to form La 1-x Ag x MnO 3 compound. Compared with LCMO thin films, Ag -doping can observably improve the TM-I and decrease the resistivity of the samples.


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