Thermal Analysis of Zone‐Melting Recrystallization of Silicon‐on‐Insulator Structures with an Infrared Heat Source: An Overview

1992 ◽  
Vol 139 (9) ◽  
pp. 2687-2695 ◽  
Author(s):  
I. N. Miaoulis ◽  
P. Y. Wong ◽  
S. M. Yoon ◽  
R. D. Robinson ◽  
C. K. Hess
Keyword(s):  
Thermal Analysis ◽  
Heat Source ◽  
Zone Melting ◽  
Silicon On Insulator

ChemInform Abstract: Thermal Analysis of Zone-Melting Recrystallization of Silicon-on- Insulator Structures with an IR Heat Source: An Overview

ChemInform ◽  
2010 ◽  
Vol 23 (47) ◽  
pp. no-no
Author(s):  
I. N. MIAOULIS ◽  
P. Y. WONG ◽  
S. M. YOON ◽  
R. D. ROBINSON ◽  
C. K. HESS
Keyword(s):  
Thermal Analysis ◽  
Heat Source ◽  
Zone Melting ◽  
Silicon On Insulator

Parametric Study of Zone-Melting-Recrystallization Processing of Silicon on Insulator Structures

1989 ◽  
Vol 157 ◽  
Author(s):  
Joseph Lipman ◽  
Ioannis N. Miaoulis ◽  
James S. Im
Keyword(s):  
Thermal Conductivity ◽  
Temperature Distribution ◽  
Heat Source ◽  
Temperature Profile ◽  
Parametric Study ◽  
Zone Melting ◽  
Heat Losses ◽  
Silicon On Insulator ◽  
Graphical Form ◽  
The Relationship

ABSTRACTThe effects of four thermal parameters on the temperature distribution during Zone-Melting-Recrystalllzation processing of Slllcon-On-Insulator devices with graphite strip as the heat source were investigated numerically. Results indicate that the convective heat losses, the variability of the thermal conductivity of silicon as a function of temperature, and the multilayer nature of the structure do not affect the temperature distribution significantly. However, the velocity of the graphite strip can significantly affect the temperature distribution. The temperature profile remains the same for graphite strip velocities below 0.03 cm/sec. The relationship between required graphite strip temperature and velocity of the strip for film melting to occur is presented in graphical form.

Heat source model calibration for thermal analysis of laser powder-bed fusion

2020 ◽  
Vol 106 (7-8) ◽  
pp. 3367-3379 ◽  
Author(s):  
Shahriar Imani Shahabad ◽  
Zhidong Zhang ◽  
Ali Keshavarzkermani ◽  
Usman Ali ◽  
Yahya Mahmoodkhani ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Heat Source ◽  
Model Calibration ◽  
Source Model ◽  
Powder Bed Fusion ◽  
Laser Powder Bed Fusion ◽  
Heat Source Model ◽  
Powder Bed

The Role of Oxygen in Zone-Melting Recrystallization of Silicon-On-Insulator Films

1983 ◽  
Vol 23 ◽  
Author(s):  
John C. C. Fan ◽  
B-Y. Tsaur ◽  
C. K. Chen ◽  
J. R. Dick ◽  
L. L. Kazmerski
Keyword(s):  
Dissolved Oxygen ◽  
Mass Spectroscopy ◽  
Zone Melting ◽  
Constitutional Supercooling ◽  
Common Origin ◽  
Silicon On Insulator ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

ABSTRACTUsing secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.

Zone-melting study of LiSrAlF6 and LiSrAlF6:Cr3+ by thermal analysis

1999 ◽  
Vol 198-199 ◽  
pp. 466-470 ◽  
Author(s):  
A.M.E Santo ◽  
S.L Baldochi ◽  
S.P Morato
Keyword(s):  
Thermal Analysis ◽  
Zone Melting

scholarly journals Growing of Mercury-Indium Telluride Perfect Single Crystals

2016 ◽  
Vol 17 (1) ◽  
pp. 129-133
Author(s):  
O.V. Galochkin ◽  
Y.D. Zakharuk ◽  
V.M. Sklyarchuk ◽  
V.Z. Tsaliy ◽  
A.A. Asheulov ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Differential Thermal Analysis ◽  
Single Crystals ◽  
Structure Analysis ◽  
Zone Melting ◽  
X Ray ◽  
Modified Method ◽  
Indium Telluride

The perfect single crystals of mercury-indium telluride were grown by the modified method of zone melting. The differential thermal analysis (DTA) and X-ray structure analysis are performed.

Sign in / Sign up

Export Citation Format

Share Document