Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations

ECS Transactions ◽

10.1149/1.2355793 ◽

2019 ◽

Vol 3 (7) ◽

pp. 45-54 ◽

Author(s):

Enzo Ungersboeck ◽

Viktor Sverdlov ◽

Hans Kosina ◽

Siegfried Selberherr

Keyword(s):

Electron Mobility ◽

Low Field ◽

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The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs

Journal of Applied Physics ◽

10.1063/1.5003253 ◽

2017 ◽

Vol 122 (11) ◽

pp. 114303 ◽

Author(s):

Gokula Kannan ◽

Dragica Vasileska

Keyword(s):

Surface Roughness ◽

Electron Mobility ◽

Low Field ◽

Surface Roughness Scattering ◽

Field Electron ◽

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Measurement of the low‐field electron mobility and compensation ratio profiles in GaAs field‐effect transistors

Applied Physics Letters ◽

10.1063/1.96521 ◽

1986 ◽

Vol 48 (6) ◽

pp. 431-433 ◽

Author(s):

P. A. Folkes

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Compensation Ratio ◽

Low Field ◽

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An analytical model of low field and high field electron mobility in wurtzite indium nitride

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-016-5259-x ◽

2016 ◽

Vol 27 (11) ◽

pp. 11353-11357 ◽

Author(s):

Shulong Wang ◽

Hongxia Liu ◽

Qing Chen ◽

Hailin Zhang

Keyword(s):

Analytical Model ◽

Electron Mobility ◽

Indium Nitride ◽

Low Field ◽

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A new technique to determine the average low-field electron mobility in MESFET using C-V measurement

IEEE Transactions on Electron Devices ◽

10.1109/16.155868 ◽

1992 ◽

Vol 39 (9) ◽

pp. 1982-1986 ◽

Author(s):

B.-J. Moon ◽

M.J. Helix ◽

S. Lee

Keyword(s):

Electron Mobility ◽

New Technique ◽

Low Field ◽

Field Electron ◽

A New Technique

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Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.902899 ◽

2007 ◽

Vol 54 (9) ◽

pp. 2204-2212 ◽

Author(s):

S.. Reggiani ◽

E.. Gnani ◽

A.. Gnudi ◽

M.. Rudan ◽

G.. Baccarani

Keyword(s):

Electron Mobility ◽

Mobility Model ◽

Double Gate ◽

Low Field ◽

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Low Field Electron Mobility Degradation in Silicon MOS Transistors Under Uniform Hot Electron Injection

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2694062 ◽

2017 ◽

Vol 17 (2) ◽

pp. 422-431

Author(s):

Mattia Rossetti

Keyword(s):

Electron Mobility ◽

Electron Injection ◽

Hot Electron ◽

Mos Transistors ◽

Low Field ◽

Field Electron ◽

Mobility Degradation ◽

Hot Electron Injection

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Low-field electron mobility in wurtzite InN

Applied Physics Letters ◽

10.1063/1.2166195 ◽

2006 ◽

Vol 88 (3) ◽

pp. 032101 ◽

Author(s):

V. M. Polyakov ◽

F. Schwierz

Keyword(s):

Electron Mobility ◽

Low Field ◽

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Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations

ECS Meeting Abstracts ◽

10.1149/ma2006-02/31/1397 ◽

2006 ◽

Keyword(s):

Electron Mobility ◽

Low Field ◽

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The low field electron mobility of tetramethylsilane

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/0168-9002(92)90960-c ◽

1992 ◽

Vol 320 (3) ◽

pp. 608-609

Author(s):

H. Faidas ◽

L.G. Christophorou

Keyword(s):

Electron Mobility ◽

Low Field ◽

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The Low-Field Electron Mobility in Bulk AlGaN

phys stat sol (a) ◽

10.1002/(sici)1521-396x(199911)176:1<359::aid-pssa359>3.0.co;2-2 ◽

1999 ◽

Vol 176 (1) ◽

pp. 359-362 ◽

Author(s):

B. K. Ridley

Keyword(s):

Electron Mobility ◽

Low Field ◽

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