Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application

2019 ◽  
Vol 3 (7) ◽  
pp. 613-626
Author(s):  
Masanobu Miyao ◽  
Hiroshi Kanno ◽  
Isao Tsunoda ◽  
Taizoh Sadoh
2021 ◽  
Vol 138 ◽  
pp. 111241
Author(s):  
Boseon Yun ◽  
Tan Tan Bui ◽  
Paul Lee ◽  
Hayeong Jeong ◽  
Seung Beom Shin ◽  
...  

2011 ◽  
Vol 11 (4) ◽  
pp. S151-S153
Author(s):  
Sang-Joo Lee ◽  
Seung-Jae Yun ◽  
Se-Wan Son ◽  
Chang-Woo Byun ◽  
Seung-Ki Joo

1999 ◽  
Vol 85 (12) ◽  
pp. 8445-8450 ◽  
Author(s):  
David C. Paine ◽  
T. Whitson ◽  
D. Janiac ◽  
R. Beresford ◽  
Cleva Ow Yang ◽  
...  

2010 ◽  
Vol 173 (1-3) ◽  
pp. 89-93 ◽  
Author(s):  
Takaharu Miyazaki ◽  
Takayuki Imai ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Desheng Fu ◽  
...  

2006 ◽  
Vol 84 (1) ◽  
pp. 137-146 ◽  
Author(s):  
TAKUJI NAOYAMA ◽  
MINORU NODA ◽  
MASANORI OKUYAMA ◽  
HIRONORI FUJISAWA ◽  
MASARU SHIMIZU ◽  
...  

2002 ◽  
Vol 744 ◽  
Author(s):  
M. Miyao ◽  
H. Kanno ◽  
I. Tsunoda ◽  
T. Sadoh ◽  
A. Kenjo

ABSTRACTMetal-induced low temperature (≤ 550 °C) crystallization of a-Si1-xGex (0 ≤ × ≤ 1 ) layers on SiO2 films has been investigated. For low Ge fractions below 20 %, Ge-doping enhanced plane growth was observed. This realized strain-free poly-Si0.8Ge0.2 films with large grains (18 μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions with 40–60 %. Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. As a result, very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained at the optimized growth conditions (x: 0.4, annealing: 450 °C, 20 h). These new polycrystalline SiGe films on insulators should be used for the advanced system-in-displays and novel one-dimensional wires.


2009 ◽  
Vol 117 (1369) ◽  
pp. 950-953 ◽  
Author(s):  
Takaharu MIYAZAKI ◽  
Setsu SOU ◽  
Naonori SAKAMOTO ◽  
Naoki WAKIYA ◽  
Hisao SUZUKI

Sign in / Sign up

Export Citation Format

Share Document