Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films

2002 ◽  
Vol 744 ◽  
Author(s):  
M. Miyao ◽  
H. Kanno ◽  
I. Tsunoda ◽  
T. Sadoh ◽  
A. Kenjo
Keyword(s):  
Low Temperature ◽  
Annealing Temperature ◽  
Growth Conditions ◽  
The Other ◽  
One Dimensional ◽  
Insulating Films ◽  
Low Temperature Crystallization ◽  
Advanced System ◽  
Ge Doping ◽  
Temperature Crystallization

ABSTRACTMetal-induced low temperature (≤ 550 °C) crystallization of a-Si1-xGex (0 ≤ × ≤ 1 ) layers on SiO2 films has been investigated. For low Ge fractions below 20 %, Ge-doping enhanced plane growth was observed. This realized strain-free poly-Si0.8Ge0.2 films with large grains (18 μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions with 40–60 %. Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. As a result, very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained at the optimized growth conditions (x: 0.4, annealing: 450 °C, 20 h). These new polycrystalline SiGe films on insulators should be used for the advanced system-in-displays and novel one-dimensional wires.

Low Temperature (~300°C) Epitaxial Growth of SiGe by Liquid-Solid Coexisting Annealing of A-GeSn/Si(100) Structure

2013 ◽  
Vol 481 ◽  
pp. 137-140
Author(s):  
Hironori Chikita ◽  
Ryo Matsumura ◽  
T. Sadoh ◽  
M. Miyao
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Epitaxial Growth ◽  
Annealing Time ◽  
Large Scale ◽  
Annealing Temperature ◽  
Next Generation ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si (100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application

2019 ◽  
Vol 3 (7) ◽  
pp. 613-626
Author(s):  
Masanobu Miyao ◽  
Hiroshi Kanno ◽  
Isao Tsunoda ◽  
Taizoh Sadoh
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Insulating Films ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Photo-assisted low temperature crystallization of solution-derived LiCoO2 thin film

2021 ◽  
Vol 138 ◽  
pp. 111241
Author(s):  
Boseon Yun ◽  
Tan Tan Bui ◽  
Paul Lee ◽  
Hayeong Jeong ◽  
Seung Beom Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Low-Temperature Crystallization of Forsterite and Orthoenstatite

2004 ◽  
Vol 82 (1) ◽  
pp. 22-26 ◽  
Author(s):  
Takayuki Ban ◽  
Yutaka Ohya ◽  
Yasutaka Takahashi
Keyword(s):  
Low Temperature ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

A Model for Low Temperature Crystallization of Silicate Dust in Protoplanetary Disks

2009 ◽  
Author(s):  
Tetsuo Yamamoto ◽  
Kyoko K. Tanaka ◽  
Tomonori Usuda ◽  
Motohide Tamura ◽  
Miki Ishii
Keyword(s):  
Low Temperature ◽  
Protoplanetary Disks ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Processing of Stoichiometric and Ti Doped LiNbO3 Films with Preferred Orientation from Metal Alkoxides

1990 ◽  
Vol 200 ◽  
Author(s):  
S. Hirano ◽  
K. Kikuta ◽  
K. Kato
Keyword(s):  
Water Vapor ◽  
Low Temperature ◽  
Preferred Orientation ◽  
Metal Alkoxides ◽  
Sapphire Substrates ◽  
Vapor Stream ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

ABSTRACTStoichiometric and Ti-doped LiNbO3 films could be synthesized by the organometallic route. The films were epitaxially crystallized at temperatures around 400°C on sapphire substrates. The reaction control of alkoxides in solvent was found to be very critical for adjusting the stoichiometry and the low temperature crystallization, as well as the crystallization in water vapor stream.

Electron-Beam-Assisted Low-Temperature Crystallization of CuInSe$_text{2}$

2019 ◽  
Vol 69 (5) ◽  
pp. 458-461
Author(s):  
Maeng Jun KIM ◽  
Sung Youp LEE ◽  
Hyeong Rag LEE ◽  
Sang Ho SOHN*
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization
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