Epitaxial Growth of Zinc- and Cadmium-Doped Gallium Phosphide by Gallium Chloride Vapor Transport

1968 ◽  
Vol 115 (8) ◽  
pp. 850 ◽  
Author(s):  
Lars C. Luther ◽  
D. D. Roccasecca
Keyword(s):  
Epitaxial Growth ◽  
Gallium Phosphide ◽  
Vapor Transport ◽  
Gallium Chloride

Epitaxial Growth of ZnTe on ZnSe by Vapor Transport

1967 ◽  
Vol 6 (8) ◽  
pp. 1013-1013 ◽  
Author(s):  
Yoshinobu Tsujimoto ◽  
Masakazu Fukai
Keyword(s):  
Epitaxial Growth ◽  
Vapor Transport

All-epitaxial growth of orientation-patterned gallium phosphide (OPGaP)

2012 ◽  
Author(s):  
Peter G. Schunemann ◽  
Lee Mohnkern ◽  
Alice Vera ◽  
Xiaoping S. Yang ◽  
Angie C. Lin ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Gallium Phosphide

AlN Substrates and Epitaxy Results

2010 ◽  
Vol 645-648 ◽  
pp. 1183-1186
Author(s):  
Yuri N. Makarov ◽  
T.Yu. Chemekova ◽  
O.V. Avdeev ◽  
N. Mokhov ◽  
S.S. Nagalyuk ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Uv Light ◽  
Laser Diodes ◽  
Ultra Violet ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Light Emitting ◽  
Saw Devices ◽  
Bulk Single Crystals

AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.

Controlling the Epitaxial Growth of Bi2Te3, BiTe, and Bi4Te3 Pure Phases by Physical Vapor Transport

2018 ◽  
Vol 57 (16) ◽  
pp. 10090-10099 ◽  
Author(s):  
Omar Concepción ◽  
Miguel Galván-Arellano ◽  
Vicente Torres-Costa ◽  
Aurelio Climent-Font ◽  
Daniel Bahena ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Pure Phases
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