Junction Delineation in GaSb by Differential Chemical Etch Rate

1962 ◽  
Vol 109 (2) ◽  
pp. 166 ◽  
Author(s):  
S. J. Silverman
Keyword(s):  
Etch Rate ◽  
Chemical Etch

Chemical Etch Rate and X-Ray Structure of Reactive Sputtered c-Axis Aligned Crystalline InxGayZnzO4Films

2015 ◽  
Vol 4 (5) ◽  
pp. Q43-Q45 ◽  
Author(s):  
Bin Zhu ◽  
David M. Lynch ◽  
Chen-yang Chung ◽  
Dieter G. Ast ◽  
Raymond G. Greene ◽  
...  
Keyword(s):  
Etch Rate ◽  
X Ray ◽  
Chemical Etch

Investigation On Subsurface Damage In Silicon Wafers

1996 ◽  
Vol 442 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar ◽  
Sanboh Lee
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Silicon Wafers ◽  
Machining Processes ◽  
Perfect Single Crystal ◽  
Crystal Silicon ◽  
Micro Raman Spectroscopy ◽  
Chemical Etch

AbstractMicro-Raman spectroscopy and chemical etching were applied to determine the depth of subsurface damage in silicon wafers undergoing different machining processes: cutting, grinding, polishing and lapping. In comparison with the Raman spectrum of perfect single crystal silicon, both the shape and intensity at the shoulder (500 cm−1) and the subpeak (300 cm−1) spectral regions were changed in all the machined wafers. The intensities at shoulder and subpeak gradually decreased and finally resumed to normal, as the depth of the investigated layer increased. According to the chemical etch rate, the depth of the subsurface damage was thus evaluated for the different wafers. TEM observations further confirmed the obtained results.

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