Improved Hole-Injection and Power Efficiency of Organic Light-Emitting Diodes Using an Ultrathin Li-Doped ZnO Buffer Layer

2007 ◽  
Vol 154 (3) ◽  
pp. J105 ◽  
Author(s):  
Hsin-Hsuan Huang ◽  
Sheng-Yuan Chu ◽  
Po-Ching Kao ◽  
Yung-Chen Chen ◽  
Ren-Chuan Chang
Keyword(s):  
Buffer Layer ◽  
Power Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Organic Light ◽  
Doped Zno ◽  
Zno Buffer Layer

Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

2009 ◽  
Vol 479 (1-2) ◽  
pp. 520-524 ◽  
Author(s):  
Hsin-Hsuan Huang ◽  
Sheng-Yuan Chu ◽  
Po-Ching Kao ◽  
Yung-Chen Chen ◽  
Ming-Ru Yang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Power Efficiency ◽  
Hole Injection ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices ◽  
Zno Buffer Layer

Organic light-emitting diodes with hydrogenated In-doped ZnO thin films as transparent conductive electrodes

2008 ◽  
Vol 23 (6) ◽  
pp. 1674-1681 ◽  
Author(s):  
Young Ran Park ◽  
Young Sung Kim
Keyword(s):  
Power Efficiency ◽  
Light Emitting Diodes ◽  
Control Device ◽  
Hydrogen Gas ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Doped Zno ◽  
Transparent Conductive Electrodes ◽  
Luminance Efficiency

Hydrogenated In-doped ZnO (ZIO:H) films grown at different ratios, R, of hydrogen to argon were deposited at a substrate temperature of 100 °C for the organic light-emitting diodes (OLEDs). The OLEDs with the ZIO:H (R = 0.08) anode achieved a maximum luminance efficiency of 3.4 cd/A and a power efficiency of 0.6 lm/W, which are as good as the values of the control device fabricated on a tin-doped indium oxide (ITO) anode. This indicates that the efficiency of the OLEDs is critically affected by the ratio of injected hydrogen gas during the deposition of the ZIO and that the ZIO:H developed herein is promising as an alternative to conventional ITO.

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