Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3168522 ◽

2009 ◽

Vol 12 (9) ◽

pp. H348 ◽

Author(s):

Hyun-Sik Seo ◽

Jong-Uk Bae ◽

Dae-Hwan Kim ◽

YuJin Park ◽

Chang-Dong Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

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Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Thin Solid Films ◽

10.1016/j.tsf.2011.08.104 ◽

2011 ◽

Vol 520 (5) ◽

pp. 1608-1611 ◽

Author(s):

Geng-Wei Chang ◽

Ting-Chang Chang ◽

Yong-En Syu ◽

Tsung-Ming Tsai ◽

Kuan-Chang Chang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

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Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00257 ◽

2017 ◽

Vol 9 (15) ◽

pp. 13278-13285 ◽

Author(s):

Kwan Yup Shin ◽

Young Jun Tak ◽

Won-Gi Kim ◽

Seonghwan Hong ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

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Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process

Scientific Reports ◽

10.1038/s41598-017-16585-x ◽

2017 ◽

Vol 7 (1) ◽

Author(s):

Seonghwan Hong ◽

Sung Pyo Park ◽

Yeong-gyu Kim ◽

Byung Ha Kang ◽

Jae Won Na ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Solution Process ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Effect of ${\hbox{SiO}}_{2}$ and/or ${\hbox{SiN}}_{x}$ Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors

Journal of Display Technology ◽

10.1109/jdt.2013.2244846 ◽

2013 ◽

Vol 9 (9) ◽

pp. 699-703 ◽

Author(s):

Dong Han Kang ◽

In Kang ◽

Sang Hyun Ryu ◽

Young Sik Ahn ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thermal Stability ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Thermal Stability Of

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Novel Passivation Layer for Improvement of Reliability In Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs)

10.7567/ssdm.2010.i-5-4 ◽

2010 ◽

Author(s):

S. H. Choi ◽

Y. W. Lee ◽

J. Y. Kwon ◽

M. K. Han

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Width Dependent Electrically Stress Degradation of Bottom Gate Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

10.7567/ssdm.2009.p-6-14 ◽

2009 ◽

Author(s):

D. H. Nam ◽

K. I. Chai ◽

S. S. Park ◽

J. G. Park ◽

H. J. Yun ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Stress Degradation ◽

Indium Gallium ◽

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Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

Journal of Materials Chemistry C ◽

10.1039/c8tc90192a ◽

2018 ◽

Vol 6 (38) ◽

pp. 10376-10376

Author(s):

Hyukjoon Yoo ◽

Young Jun Tak ◽

Won-Gi Kim ◽

Yeong-gyu Kim ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

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High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.135.192 ◽

2015 ◽

Vol 135 (6) ◽

pp. 192-198 ◽

Author(s):

Shinnosuke Iwamatsu ◽

Yutaka Abe ◽

Toru Yahagi ◽

Seiya Kobayashi ◽

Kazushige Takechi ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Sensitivity ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Fluorine-doped Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated via Solution Process

Proceedings of the International Display Workshops ◽

10.36463/idw.2019.amdp1-9 ◽

2019 ◽

pp. 527

Author(s):

Donghee Choi ◽

Byoungdeog Choi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Solution Process ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Journal of Semiconductors ◽

10.1088/1674-4926/42/3/031101 ◽

2021 ◽

Vol 42 (3) ◽

pp. 031101

Author(s):

Ying Zhu ◽

Yongli He ◽

Shanshan Jiang ◽

Li Zhu ◽

Chunsheng Chen ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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