Effect of ${\hbox{SiO}}_{2}$ and/or ${\hbox{SiN}}_{x}$ Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors

2013 ◽  
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pp. 699-703 ◽  
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Dong Han Kang ◽  
In Kang ◽  
Sang Hyun Ryu ◽  
Young Sik Ahn ◽  
Jin Jang
2018 ◽  
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Young Jun Tak ◽  
Won-Gi Kim ◽  
Yeong-gyu Kim ◽  
Hyun Jae Kim

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.


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