Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors

2010 ◽  
Vol 13 (5) ◽  
pp. H144 ◽  
Author(s):  
Hsiao-Wen Zan ◽  
Wei-Tsung Chen ◽  
Cheng-Wei Chou ◽  
Chuang-Chuang Tsai ◽  
Ching-Neng Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solid State Laser ◽  
State Laser ◽  
Low Temperature Annealing ◽  
Uv Lamp

scholarly journals Very compact tunable solid-state laser utilizing a thin-film organic semiconductor

2001 ◽  
Vol 26 (9) ◽  
pp. 593 ◽  
Author(s):  
S. Riechel ◽  
U. Lemmer ◽  
J. Feldmann ◽  
S. Berleb ◽  
A. G. Mückl ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Organic Semiconductor ◽  
Solid State Laser ◽  
State Laser

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno

scholarly journals Defining the optimal gradient doped :YAG disk for room and low temperature diode pumped solid-state laser operations

2014 ◽  
Vol 2 ◽  
Author(s):  
J.-C. Chanteloup ◽  
M. Arzakantsyan ◽  
S. Marrazzo
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Solid State Laser ◽  
Volume Distribution ◽  
Laser Amplifier ◽  
Direct Crystallization ◽  
State Laser ◽  
General Methodology ◽  
Diode Pumped ◽  
Gain Media

Abstract We propose a general methodology to define the optimum doping ion volume distribution required for an efficient solid-state laser amplifier. This approach is illustrated in the context of two experimental diode pumped Yb:YAG amplifiers operating at 300 and 160 K. Processing of such tailored gain media is now possible through horizontal direct crystallization.

An Ultraviolet Organic Thin-Film Solid-State Laser for Biomarker Applications

2005 ◽  
Vol 17 (1) ◽  
pp. 31-34 ◽  
Author(s):  
D. Schneider ◽  
T. Rabe ◽  
T. Riedl ◽  
T. Dobbertin ◽  
M. Kröger ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Laser ◽  
Organic Thin Film ◽  
State Laser

Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing

2011 ◽  
Vol 19 (9) ◽  
pp. 620 ◽  
Author(s):  
Woong Hee Jeong ◽  
Jung Hyeon Bae ◽  
Kyung Min Kim ◽  
Dong Lim Kim ◽  
You Seung Rim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Low Temperature Annealing

Annealing effects on metal-ZnO interface for improvement performance of Thin-film Transistors

2015 ◽  
Vol 1731 ◽  
Author(s):  
Miguel A. Dominguez ◽  
Francisco Flores ◽  
Adan Luna ◽  
Salvador Alcantara ◽  
Javier Martinez ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Annealing Time ◽  
Thin Film Transistors ◽  
Ultrasonic Spray Pyrolysis ◽  
Electrical Performance ◽  
Zno Films ◽  
Low Temperature Annealing ◽  
Ultrasonic Spray ◽  
Annealing Effects

ABSTRACTIn this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2/Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.

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