(Invited) Strain Engineering for Fully-Depleted SOI Devices

2019 ◽  
Vol 33 (6) ◽  
pp. 489-499 ◽  
Author(s):  
Ali Khakifirooz ◽  
Pranita Kulkarni ◽  
Stephen Bedell ◽  
Kangguo Cheng ◽  
Devendra K. Sadana ◽  
...  
Keyword(s):  
Strain Engineering ◽  
Fully Depleted ◽  
Soi Devices

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

2008 ◽  
Vol 55 (6) ◽  
pp. 3259-3264 ◽  
Author(s):  
Farah E. Mamouni ◽  
Sriram K. Dixit ◽  
Ronald D. Schrimpf ◽  
Philippe C. Adell ◽  
Ivan S. Esqueda ◽  
...  
Keyword(s):  
Gate Length ◽  
Fully Depleted ◽  
Band To Band Tunneling ◽  
Drain Bias ◽  
Soi Devices

Total ionizing dose effects on deca-nanometer fully depleted SOI devices

2005 ◽  
Vol 52 (6) ◽  
pp. 2345-2352 ◽  
Author(s):  
P. Paillet ◽  
M. Gaillardin ◽  
V. Ferlet-Cavrois ◽  
A. Torres ◽  
O. Faynot ◽  
...  
Keyword(s):  
Total Ionizing Dose ◽  
Fully Depleted ◽  
Dose Effects ◽  
Soi Devices ◽  
Total Ionizing Dose Effects

Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs]

2004 ◽  
Author(s):  
R.J. Luyken ◽  
M. Specht ◽  
W. Rosner ◽  
J. Hartwich ◽  
F. Hofmann ◽  
...  
Keyword(s):  
Fully Depleted ◽  
Soi Devices

Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

2007 ◽  
Vol 54 (6) ◽  
pp. 2174-2180 ◽  
Author(s):  
Philippe C. Adell ◽  
Hugh J. Barnaby ◽  
Ron D. Schrimpf ◽  
Bert Vermeire
Keyword(s):  
Leakage Current ◽  
Fully Depleted ◽  
Band To Band Tunneling ◽  
Soi Devices

Thermal Effects in Fully-Depleted SOI Devices

2019 ◽  
Vol 23 (1) ◽  
pp. 337-344 ◽  
Author(s):  
D. Vasileska ◽  
K. Ralevab ◽  
S. M. Goodnick
Keyword(s):  
Thermal Effects ◽  
Fully Depleted ◽  
Soi Devices

Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices

1999 ◽  
Vol 46 (7) ◽  
pp. 1503-1509 ◽  
Author(s):  
T. Ernst ◽  
S. Cristoloveanu ◽  
A. Vandooren ◽  
T. Rudenko ◽  
J.-P. Colinge
Keyword(s):  
Carrier Lifetime ◽  
Fully Depleted ◽  
Dual Gate ◽  
Soi Devices ◽  
Recombination Current

Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices

2005 ◽  
Author(s):  
Cheng Weitao ◽  
Akinobu Teramoto ◽  
Masaki Hirayama ◽  
Shigetoshi Sugawa ◽  
Tadahiro Ohmi
Keyword(s):  
High Performance ◽  
Fully Depleted ◽  
Accumulation Mode ◽  
Soi Devices
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