Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

In this paper, we look into the reduction in leakage components of a fully depleted (FD) nanoscale double-gate (DG) MOSFET architecture. Here, we have developed an numerical model for PCHEM-DG MOSFET followed by the gate-controlled band-to-band tunneling leakage and gate leakage currents in the device of 10 nm gate length and observed the reduction in the leakage components over bulk-MOSFETs. Various leakage current components have been discussed and their variations with respect to bias and device parameters are presented. The results have been compared and contrasted with standard device simulator such as MINIMOS 6.0 for the purpose of validation of the results. A dramatic increase of the gate leakage and Band-to-Band Tunneling (BTBT) leakage in nanoscaled devices drastically increases total leakage power in a logic circuit. This device proposes to reduce this power dissipation. This work provides a simple and intuitive method for lowering of leakage currents which can be very salutary for the future nanoscale device technologies.

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Computation of Gate-Induced-Drain-Leakage Current Due to Band-to-Band Tunneling for Ultrathin MOSFET

Lecture Notes in Networks and Systems - Information, Photonics and Communication ◽

10.1007/978-981-32-9453-0_1 ◽

2019 ◽

pp. 3-10

Author(s):

Krishnendu Roy ◽

Anal Roy Chowdhury ◽

Arpan Deyasi

Keyword(s):

Leakage Current ◽

Band To Band Tunneling

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A low power four transistor Schmitt Trigger for asymmetric double gate fully depleted SOI devices

2003 IEEE International Conference on Robotics and Automation (Cat No 03CH37422) SOI-03) ◽

10.1109/soi.2003.1242882 ◽

2003 ◽

Cited By ~ 18

Author(s):

Cakici ◽

Bansal ◽

Roy

Keyword(s):

Low Power ◽

Schmitt Trigger ◽

Double Gate ◽

Fully Depleted ◽

Soi Devices

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Total ionizing dose effects on deca-nanometer fully depleted SOI devices

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2005.860699 ◽

2005 ◽

Vol 52 (6) ◽

pp. 2345-2352 ◽

Cited By ~ 50

Author(s):

P. Paillet ◽

M. Gaillardin ◽

V. Ferlet-Cavrois ◽

A. Torres ◽

O. Faynot ◽

...

Keyword(s):

Total Ionizing Dose ◽

Fully Depleted ◽

Dose Effects ◽

Soi Devices ◽

Total Ionizing Dose Effects

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A SILICON GERMANIUM GRADED JUNCTIONLESS TRANSISTOR WITH LOW OFF CURRENT

International Journal of Nanoscience ◽

10.1142/s0219581x13500439 ◽

2013 ◽

Vol 12 (06) ◽

pp. 1350043 ◽

Cited By ~ 1

Author(s):

NEELAM SURANA ◽

BAHNIMAN GHOSH ◽

BALL MUKUND MANI TRIPATHY ◽

AKSHAY KUMAR SALIMATH

Keyword(s):

Leakage Current ◽

Silicon Germanium ◽

Large Deviation ◽

Hole Concentration ◽

Tunneling Current ◽

Drain Voltage ◽

Band Gap Engineering ◽

Junctionless Transistor ◽

Band To Band Tunneling ◽

State Band

We propose a Ge / Si graded junctionless transistor (JLT) which helps to reduce the band-to-band tunneling current in off-state for highly doped double gate junctionless transistor (DGJLT). In this paper, we show that there is large band-to-band tunneling (BTBT) current in off-state of silicon-channel and germanium-channel DGJLT, which causes increase in the off-state leakage current by several orders. With the help of band-gap engineering, we found that by using Ge / Si graded channel DGJLT off-state band-to-band tunneling current can be reduced. It is also observed that there is large deviation in the off-state leakage current with variation of drain voltage for Si and Ge body DGJLT, which reduces device stability. It is found that in Ge / Si graded DGJLT variation off-state leakage current with drain voltage is controlled. In Si and Ge , DGJLT electrons from the valence band of the channel tunnel to the conduction band of drain leaves holes which causes increased hole concentration in the channel creating parasitic 'BJT'.

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Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs]

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. ◽

10.1109/essderc.2003.1256903 ◽

2004 ◽

Cited By ~ 1

Author(s):

R.J. Luyken ◽

M. Specht ◽

W. Rosner ◽

J. Hartwich ◽

F. Hofmann ◽

...

Keyword(s):

Fully Depleted ◽

Soi Devices

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Comparative Study on Off-State Breakdown Characteristics in Nanowire Junctionless and Inversion Mode Multiple Gate MOSFET

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.684.295 ◽

2013 ◽

Vol 684 ◽

pp. 295-298

Author(s):

Seung Min Lee ◽

Hyun Jun Jang ◽

Jong Tae Park

Keyword(s):

Comparative Study ◽

Leakage Current ◽

Tunneling Current ◽

Gate Bias ◽

Inversion Mode ◽

3 Dimensional ◽

Breakdown Mechanism ◽

Band To Band Tunneling ◽

State Breakdown ◽

And Inversion

A comparative study on off-state breakdown characteristics in nanowire JL and IM multiple gate MOSFETs has been performed for different gate bias voltages and fin widths. In order to understand the drain breakdown mechanism with different transistor structures, the device was simulated using the 3-dimensional ATLAS software. The band-to-band tunneling current and the gate-induced-drain-leakage current trigger the off-state breakdown in JL transistor and IM transistor, respectively. From experiment and simulation, the off-state breakdown voltage is lower in JL transistor than in IM transistor. As the gate is biased more negatively, the off-state breakdown voltages are increased in JL and IM transistors.

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