EOT Scaling and Flatband Voltage Shift with Al Addition into TiN

2019 ◽  
Vol 41 (3) ◽  
pp. 317-323
Author(s):  
Genji Nakamura ◽  
Toshio Hasegawa ◽  
Steven Consiglio ◽  
Fumitaka Amano ◽  
Vinh Luong ◽  
...  
Keyword(s):  
Voltage Shift ◽  
Flatband Voltage ◽  
Al Addition

Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

2003 ◽  
Vol 39 (21) ◽  
pp. 1499 ◽  
Author(s):  
C.W. Yang ◽  
Y.K. Fang ◽  
C.S. Lin ◽  
Y.S. Tsair ◽  
S.M. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Drain Current ◽  
Dielectric Thin Film ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage ◽  
High K Gate Dielectric

scholarly journals Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202112 ◽  
Author(s):  
Takuji Hosoi ◽  
Katsuhiro Kutsuki ◽  
Gaku Okamoto ◽  
Marina Saito ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Carrier Generation ◽  
Voltage Shift ◽  
Flatband Voltage ◽  
Thermally Grown

Positive flatband voltage shift in MOS capacitors on n-type GaN

2002 ◽  
Vol 23 (2) ◽  
pp. 79-81 ◽  
Author(s):  
K. Matocha ◽  
T.P. Chow ◽  
R.J. Gutmann
Keyword(s):  
Mos Capacitors ◽  
Voltage Shift ◽  
Flatband Voltage
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