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EOT Scaling and Flatband Voltage Shift with Al Addition into TiN
ECS Meeting Abstracts
◽
10.1149/ma2011-02/27/1916
◽
2011
◽
Keyword(s):
Voltage Shift
◽
Flatband Voltage
◽
Al Addition
Download Full-text
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Cited By
References
EOT Scaling and Flatband Voltage Shift with Al Addition into TiN
ECS Transactions
◽
10.1149/1.3633048
◽
2019
◽
Vol 41
(3)
◽
pp. 317-323
Author(s):
Genji Nakamura
◽
Toshio Hasegawa
◽
Steven Consiglio
◽
Fumitaka Amano
◽
Vinh Luong
◽
...
Keyword(s):
Voltage Shift
◽
Flatband Voltage
◽
Al Addition
Download Full-text
Demonstration of Large Flatband Voltage Shift by Designing Al2O3/SiO2 Laminated Structures with Multiple Interface Dipole Layers
ECS Meeting Abstracts
◽
10.1149/ma2017-02/14/863
◽
2017
◽
Keyword(s):
Voltage Shift
◽
Interface Dipole
◽
Flatband Voltage
◽
Multiple Interface
◽
Laminated Structures
Download Full-text
Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device
Applied Physics Letters
◽
10.1063/1.3475774
◽
2010
◽
Vol 97
(6)
◽
pp. 062901
◽
Cited By ~ 19
Author(s):
Xiaolei Wang
◽
Kai Han
◽
Wenwu Wang
◽
Xueli Ma
◽
Dapeng Chen
◽
...
Keyword(s):
Metal Oxide
◽
Electric Dipole
◽
Semiconductor Device
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Comprehensive Understanding
◽
Voltage Shift
◽
High K
◽
Flatband Voltage
Download Full-text
Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs
2017 IEEE International Reliability Physics Symposium (IRPS)
◽
10.1109/irps.2017.7936258
◽
2017
◽
Author(s):
Pushpendra Kumar
◽
Charles Leroux
◽
Blend Mohamad
◽
Alain Toffoli
◽
Giovanni Romano
◽
...
Keyword(s):
Threshold Voltage
◽
Threshold Voltage Shift
◽
Voltage Shift
◽
Al Addition
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Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift
Electronics Letters
◽
10.1049/el:20030988
◽
2003
◽
Vol 39
(21)
◽
pp. 1499
◽
Cited By ~ 3
Author(s):
C.W. Yang
◽
Y.K. Fang
◽
C.S. Lin
◽
Y.S. Tsair
◽
S.M. Chen
◽
...
Keyword(s):
Thin Film
◽
Gate Dielectric
◽
Drain Current
◽
Dielectric Thin Film
◽
Voltage Shift
◽
High K
◽
Flatband Voltage
◽
High K Gate Dielectric
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Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions
Applied Physics Letters
◽
10.1063/1.4980059
◽
2017
◽
Vol 110
(16)
◽
pp. 162907
◽
Cited By ~ 5
Author(s):
Jiayang Fei
◽
Ryota Kunugi
◽
Takanobu Watanabe
◽
Koji Kita
Keyword(s):
Layer Formation
◽
Mos Capacitors
◽
Voltage Shift
◽
Dipole Layer
◽
Dielectric Interfaces
◽
Flatband Voltage
Download Full-text
Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
Applied Physics Letters
◽
10.1063/1.3143627
◽
2009
◽
Vol 94
(20)
◽
pp. 202112
◽
Cited By ~ 77
Author(s):
Takuji Hosoi
◽
Katsuhiro Kutsuki
◽
Gaku Okamoto
◽
Marina Saito
◽
Takayoshi Shimura
◽
...
Keyword(s):
Metal Oxide
◽
Minority Carrier
◽
Semiconductor Devices
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Carrier Generation
◽
Voltage Shift
◽
Flatband Voltage
◽
Thermally Grown
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Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
Applied Physics Letters
◽
10.1063/1.2904650
◽
2008
◽
Vol 92
(13)
◽
pp. 132907
◽
Cited By ~ 118
Author(s):
Kunihiko Iwamoto
◽
Yuuichi Kamimuta
◽
Arito Ogawa
◽
Yukimune Watanabe
◽
Shinji Migita
◽
...
Keyword(s):
Metal Oxide
◽
Experimental Evidence
◽
Semiconductor Devices
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Voltage Shift
◽
High K
◽
Flatband Voltage
Download Full-text
Demonstration of Large Flatband Voltage Shift by Designing Al2O3/SiO2Laminated Structures with Multiple Interface Dipole Layers
ECS Transactions
◽
10.1149/08001.0379ecst
◽
2017
◽
Vol 80
(1)
◽
pp. 379-385
Author(s):
Koji Kita
◽
Hironobu Kamata
Keyword(s):
Voltage Shift
◽
Interface Dipole
◽
Flatband Voltage
◽
Multiple Interface
Download Full-text
Positive flatband voltage shift in MOS capacitors on n-type GaN
IEEE Electron Device Letters
◽
10.1109/55.981312
◽
2002
◽
Vol 23
(2)
◽
pp. 79-81
◽
Cited By ~ 47
Author(s):
K. Matocha
◽
T.P. Chow
◽
R.J. Gutmann
Keyword(s):
Mos Capacitors
◽
Voltage Shift
◽
Flatband Voltage
Download Full-text
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