Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3143627 ◽

2009 ◽

Vol 94 (20) ◽

pp. 202112 ◽

Author(s):

Takuji Hosoi ◽

Katsuhiro Kutsuki ◽

Gaku Okamoto ◽

Marina Saito ◽

Takayoshi Shimura ◽

...

Keyword(s):

Metal Oxide ◽

Minority Carrier ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Generation ◽

Voltage Shift ◽

Flatband Voltage ◽

Thermally Grown

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Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Applied Physics Letters ◽

10.1063/1.2904650 ◽

2008 ◽

Vol 92 (13) ◽

pp. 132907 ◽

Author(s):

Kunihiko Iwamoto ◽

Yuuichi Kamimuta ◽

Arito Ogawa ◽

Yukimune Watanabe ◽

Shinji Migita ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

High K ◽

Flatband Voltage

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Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate

Electrochemical and Solid-State Letters ◽

10.1149/1.3566073 ◽

2011 ◽

Vol 14 (6) ◽

pp. H241 ◽

Author(s):

Changhwan Choi ◽

Vijay Narayanan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

Flash Annealing ◽

High K ◽

Flatband Voltage ◽

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Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

Applied Physics Letters ◽

10.1063/1.3475774 ◽

2010 ◽

Vol 97 (6) ◽

pp. 062901 ◽

Author(s):

Xiaolei Wang ◽

Kai Han ◽

Wenwu Wang ◽

Xueli Ma ◽

Dapeng Chen ◽

...

Keyword(s):

Metal Oxide ◽

Electric Dipole ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Comprehensive Understanding ◽

Voltage Shift ◽

High K ◽

Flatband Voltage

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Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

Applied Physics Letters ◽

10.1063/1.1592634 ◽

2003 ◽

Vol 83 (2) ◽

pp. 308-310 ◽

Author(s):

C. W. Yang ◽

Y. K. Fang ◽

C. H. Chen ◽

S. F. Chen ◽

C. Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

High K ◽

Flatband Voltage ◽

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Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor

Journal of Applied Physics ◽

10.1063/1.3093892 ◽

2009 ◽

Vol 105 (6) ◽

pp. 064108 ◽

Author(s):

Wenwu Wang ◽

Koji Akiyama ◽

Wataru Mizubayashi ◽

Toshihide Nabatame ◽

Hiroyuki Ota ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Voltage Shift ◽

High K ◽

Flatband Voltage

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Effect of flat‐band voltage shift and nonvolatile memory in platinum‐diffused metal‐oxide‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.334043 ◽

1984 ◽

Vol 56 (4) ◽

pp. 1160-1164 ◽

Author(s):

Hideo Kato ◽

Seiichi Mori ◽

Hiroshi Kuwano

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

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Quasi-Non Volatile Flatband-Voltage Shift in Metal-Oxide-Semiconductor Capacitors with Silicon-Rich-Oxide Dielectric

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195281 ◽

2001 ◽

Author(s):

M. Rosmeulen ◽

E. Sleeckx ◽

K. De Meyer

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Shift ◽

Flatband Voltage

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Nitridation

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