Review—Defect-Tolerant Luminescent Properties of Low InN Mole Fraction InxGa1-xN Quantum Wells under the Presence of Polarization Fields

2019 ◽  
Vol 9 (1) ◽  
pp. 015016
Author(s):  
Shigefusa F. Chichibu
Keyword(s):  
Quantum Wells ◽  
Mole Fraction ◽  
Luminescent Properties

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum

The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

2001 ◽  
Vol 30 (3) ◽  
pp. 134-137 ◽  
Author(s):  
H. M. Ng ◽  
R. Harel ◽  
S. N. G. Chu ◽  
A. Y. Cho
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Mole Fraction

Interband Transitions in GaInNAs/GaAs Single Quantum Wells

2002 ◽  
Vol 744 ◽  
Author(s):  
M. O. Manasreh ◽  
D. J. Friedman ◽  
W. Q. Ma ◽  
C. L. Workman ◽  
C. E. George ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Mole Fraction ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Peak Position ◽  
Interband Transitions ◽  
Single Quantum ◽  
Pl Spectra ◽  
Vapor Deposition Technique ◽  
Pl Intensity

ABSTRACTPhotoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition technique on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In composition and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0 to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blue-shift in the PL spectra peak position energy in samples grown with high DMH/III ratio.

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