A Wafer-Scale Material Removal Rate Model for Chemical Mechanical Planarization

2020 ◽  
Vol 9 (7) ◽  
pp. 074002
Author(s):  
Qinzhi Xu ◽  
Lan Chen ◽  
Jianyun Liu ◽  
He Cao
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Rate Model ◽  
Wafer Scale ◽  
Material Removal Rate Model

Material Removal Model and Experimental Verification for Abrasive Jet Precision Finishing with Wheel as Restraint

2006 ◽  
Vol 304-305 ◽  
pp. 555-559 ◽  
Author(s):  
Chang He Li ◽  
Guang Qi Cai ◽  
Shi Chao Xiu ◽  
Q. Li
Keyword(s):  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Experimental Results ◽  
Grinding Wheel ◽  
Rate Model ◽  
Material Removal Model ◽  
Material Removal Rate Model ◽  
Three Body ◽  
Precision Finishing

The material removal rate (MRR) model was investigated in abrasive jet precision finishing (AJPF) with wheel as restraint. When abrasive wore and workpiece surface micro-protrusion removed, the size ratio for characteristic particle size to minimum film thickness gradually diminishing, the abrasive machining from two-body lapping to three-body polishing transition in AJPF with grinding wheel as restraint. In the study, the material removal rate model was established according to machining mechanisms and machining modes from two-body to three-body process transition condition, and active number of particles in grinding zone were calculated and simulated. Experiments were performed in the plane grinder for material removal mechanism and academic models verification. It can be observed from experimental results that the surface morphology change dramatically to a grooved or micro-machined surface with all the grooves aligned in the sliding direction in two-body lapping mode. On the other hand, the surface is very different, consists of a random machining pits with very little sign of any directionality to the deformation in the three-body machining mode. Furthermore, the material removal rate model was found to give a good description of the experimental results.

A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing

2005 ◽  
Vol 127 (1) ◽  
pp. 190-197 ◽  
Author(s):  
Yeau-Ren Jeng ◽  
Pay-Yau Huang
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Hardness ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Rate Model ◽  
Abrasive Particles ◽  
Material Removal Rate Model

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

A Material Removal Rate Model Considering Interfacial Micro-Contact Wear Behavior for Chemical Mechanical Polishing

2005 ◽  
Author(s):  
Yeau-Ren Jeng ◽  
Pay-Yau Huang
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Hardness ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Rate Model ◽  
Abrasive Particles ◽  
Material Removal Rate Model

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

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