Enhancement-Mode Algaas/Ingaas Pseudomorphic High-Electron-Mobility Transistor With a Liquid Phase Oxidized GaAs As Gate Oxide

ECS Meeting Abstracts ◽

10.1149/ma2013-02/23/1847 ◽

2013 ◽

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l932 ◽

2006 ◽

Vol 45 (No. 35) ◽

pp. L932-L934 ◽

Author(s):

Li-Hsin Chu ◽

Heng-Tung Hsu ◽

Edward-Yi Chang ◽

Tser-Lung Lee ◽

Sze-Hung Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

IEEE Electron Device Letters ◽

10.1109/led.2015.2403954 ◽

2015 ◽

Vol 36 (4) ◽

pp. 318-320 ◽

Author(s):

Cheng Liu ◽

Shu Yang ◽

Shenghou Liu ◽

Zhikai Tang ◽

Hanxing Wang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Thermally Stable ◽

High Electron Mobility ◽

Enhancement Mode

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Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.486 ◽

2015 ◽

Vol 764-765 ◽

pp. 486-490

Author(s):

Chih Hao Wang ◽

Liang Yu Su ◽

Finella Lee ◽

Jian Jang Huang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron Mobility Transistor ◽

High Electron ◽

Saturation Current ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

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Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors

Journal of Electronic Materials ◽

10.1007/s11664-007-0298-y ◽

2007 ◽

Vol 37 (5) ◽

pp. 550-553 ◽

Author(s):

B.S. Kang ◽

H.T. Wang ◽

F. Ren ◽

M. Hlad ◽

B.P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

Applied Physics Express ◽

10.7567/apex.10.056502 ◽

2017 ◽

Vol 10 (5) ◽

pp. 056502 ◽

Author(s):

Yunlong He ◽

Chong Wang ◽

Minhan Mi ◽

Meng Zhang ◽

Qing Zhu ◽

...

Keyword(s):

Plasma Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

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In/sub 0.5/Ga/sub 0.5/P/In/sub 0.22/Ga/sub 0.78/As/GaAs pseudomorphic high electron mobility transistor with gate oxide layer for improving on-state and off-state breakdown voltages

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984600 ◽

2002 ◽

Author(s):

J.-W. Lee ◽

I.-H. Kang ◽

S.-J. Kang ◽

S.-J. Jo ◽

S.-K. In ◽

...

Keyword(s):

Oxide Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

State Breakdown

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Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

Applied Physics Letters ◽

10.1063/1.3430569 ◽

2010 ◽

Vol 96 (20) ◽

pp. 203506 ◽

Author(s):

Kuan-Wei Lee ◽

Hsien-Cheng Lin ◽

Fang-Ming Lee ◽

Hou-Kuei Huang ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Noise Performance ◽

High Electron Mobility ◽

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Enhancement-mode pseudomorphic high-electron-mobility transistor with a nanoscale oxidized GaAs gate

2012 International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.2012.6403317 ◽

2012 ◽

Author(s):

Kuan-Wei Lee ◽

Hsien-Cheng Lin ◽

Yeong-Her Wang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters ◽

10.1109/led.2005.859629 ◽

2005 ◽

Vol 26 (12) ◽

pp. 864-866 ◽

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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