Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors

2007 ◽  
Vol 37 (5) ◽  
pp. 550-553 ◽  
Author(s):  
B.S. Kang ◽  
H.T. Wang ◽  
F. Ren ◽  
M. Hlad ◽  
B.P. Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Gate Oxide ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Ph Sensors ◽  
High Electron Mobility

A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

2019 ◽  
Vol 217 (7) ◽  
pp. 1900794
Author(s):  
Nayana Remesh ◽  
Sandeep Kumar ◽  
Ivor Guiney ◽  
Colin J. Humphreys ◽  
Srinivasan Raghavan ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Substrate Bias ◽  
High Electron Mobility ◽  
Novel Technique

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

2011 ◽  
Vol 98 (12) ◽  
pp. 122103 ◽  
Author(s):  
M. R. Holzworth ◽  
N. G. Rudawski ◽  
S. J. Pearton ◽  
K. S. Jones ◽  
L. Lu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Gate Oxide ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

2017 ◽  
Vol 214 (7) ◽  
pp. 1600944 ◽  
Author(s):  
Tien Tung Luong ◽  
Franky Lumbantoruan ◽  
Yen‐Yu Chen ◽  
Yen‐Teng Ho ◽  
You‐Chen Weng ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Inversion Channel ◽  
Rf Loss ◽  
Loss Mechanisms

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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