In/sub 0.5/Ga/sub 0.5/P/In/sub 0.22/Ga/sub 0.78/As/GaAs pseudomorphic high electron mobility transistor with gate oxide layer for improving on-state and off-state breakdown voltages

2002 ◽  
Author(s):  
J.-W. Lee ◽  
I.-H. Kang ◽  
S.-J. Kang ◽  
S.-J. Jo ◽  
S.-K. In ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Electron Mobility ◽  
Gate Oxide ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
State Breakdown

Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors

2007 ◽  
Vol 37 (5) ◽  
pp. 550-553 ◽  
Author(s):  
B.S. Kang ◽  
H.T. Wang ◽  
F. Ren ◽  
M. Hlad ◽  
B.P. Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Gate Oxide ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Ph Sensors ◽  
High Electron Mobility

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

2011 ◽  
Vol 98 (12) ◽  
pp. 122103 ◽  
Author(s):  
M. R. Holzworth ◽  
N. G. Rudawski ◽  
S. J. Pearton ◽  
K. S. Jones ◽  
L. Lu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Gate Oxide ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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