Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

1985 ◽  
Vol 57 (2) ◽  
pp. 426-431 ◽  
Author(s):  
Shizuo Fujita ◽  
Toshiyuki Ohishi ◽  
Hideo Toyoshima ◽  
Akio Sasaki

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.


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