Effect of plasma treatment on the microstructure and electrical properties of MIM capacitors with PECVD silicon oxide and silicon nitride

2007 ◽  
Vol 42 (3) ◽  
pp. 941-947 ◽  
Author(s):  
Chia-Cheng Ho ◽  
Bi-Shiou Chiou
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Mim Capacitors

scholarly journals A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Comparison Study

Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Ion Irradiation

scholarly journals Electron Beam Effects on Silicon Oxide Films – Structure and Electrical Properties

2018 ◽  
Vol 24 (S1) ◽  
pp. 1810-1811 ◽  
Author(s):  
Krishna Kanth Neelisetty ◽  
Sebastian Gutsch ◽  
Falk von Seggern ◽  
Alan Molinari ◽  
Alexander Vahl ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Silicon Oxide ◽  
Oxide Films

Reliability of Electrodeposited Copper and Ecrcvd Siof Films for Multilevel Metallization

1999 ◽  
Vol 565 ◽  
Author(s):  
Seoghyeong Lee ◽  
Yong-An Kim ◽  
Kyoung-Woo Lee ◽  
Seil Sohn ◽  
Young-Il Kim ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Multilayer Structure ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Vacuum Furnace ◽  
Electrical Stability ◽  
Metal Interconnects ◽  
The Stability ◽  
Interconnect System

AbstractThe effect of a post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) was studied. Also, the thermal stability of an electrodeposited Cu / sputtered Ta interconnect system with SiOF intermetal dielectrics was examined by annealing in a vacuum furnace. The stability of the dielectric constant of SiOF films was improved by O2 post plasma treatment. Surface modification by the plasma treatment was effective in prevention of water absorption. The Cu/Ta/SiOF/Si system was thermally stable at least up to 500°C for 3h. For the Cu/Ta/SiOF/Si multilayer structure, the plasma treatment seemed to play a big role in suppressing the interdiffusion between SiOF and metal interconnects. By C-V measurement, the electrical stability of the Cu/Ta/SiOF/Si multilayer structure was found to be stable up to 500°C for 2 h.

Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide

2000 ◽  
Vol 115 (12) ◽  
pp. 683-686 ◽  
Author(s):  
X.C Wu ◽  
W.H Song ◽  
B Zhao ◽  
W.D Huang ◽  
M.H Pu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide
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