Characterization of Electric Field Induced Ion Migration in Semiconductor Encapsulation Materials

Keyword(s):  
2021 ◽  
Vol 109 ◽  
pp. 103537
Author(s):  
Li Cai ◽  
Qiang Hu ◽  
Jianguo Wang ◽  
Xin Zou ◽  
Quanxin Li ◽  
...  

2000 ◽  
Vol 73 (1-3) ◽  
pp. 230-234 ◽  
Author(s):  
M Ichimura ◽  
M Hirano ◽  
A Tada ◽  
E Arai ◽  
H Takamatsu ◽  
...  

Science ◽  
1950 ◽  
Vol 112 (2904) ◽  
pp. 227-229 ◽  
Author(s):  
Hugh J. McDonald ◽  
Matthew C. Urbin ◽  
Martin B. Williamson

2007 ◽  
Vol 17 (01) ◽  
pp. 173-176 ◽  
Author(s):  
BARBAROS ASLAN ◽  
LESTER F. EASTMAN ◽  
WILLIAM J. SCHAFF ◽  
XIAODONG CHEN ◽  
MICHAEL G. SPENCER ◽  
...  

We present the experimental development and characterization of GaN ballistic diodes for THz operation. Fabricated devices have been described and gathered experimental data is discussed. The major problem addressed is the domination of the parasitic resistances which significantly reduce the accelerating electric field across the ballistic region (intrinsic layer).


2008 ◽  
Vol 50 (5) ◽  
pp. 1391-1396 ◽  
Author(s):  
R.O. Mota ◽  
Y. Liu ◽  
O.R. Mattos ◽  
P. Skeldon ◽  
G.E. Thompson

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097181 ◽  
Author(s):  
Ghada H. Dushaq ◽  
Amro Alkhatib ◽  
Mahmoud S. Rasras ◽  
Ammar M. Nayfeh

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