Analysis of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors
with Bi-Layer Gate Dielectric Stacks Using Maxwell-Wagner Instability
Model
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2013 ◽
Vol 52
(7R)
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pp. 071102
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2014 ◽
Vol 211
(9)
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pp. 2126-2133
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2015 ◽
Vol 135
(6)
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pp. 192-198
◽
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2011 ◽
Vol 50
(3)
◽
pp. 03CB06
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