Low-Temperature Processed Metal-Semiconductor Field-Effect Transistor with In–Ga–Zn–O Channel Deposited by Ar+O2+H2 Sputtering

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1926-1926
Author(s):  
Yusaku Magari ◽  
Mamoru Furuta
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Tunneling spectroscopy of metal-oxide-semiconductor field-effect transistor at low temperature

2005 ◽  
Vol 86 (24) ◽  
pp. 242104
Author(s):  
Mingqiang Bao ◽  
Fei Liu ◽  
Filipp Baron ◽  
Kang L. Wang ◽  
Ruigang Li
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Tunneling Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor

Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGJ04 ◽  
Author(s):  
Yusaku Magari ◽  
S G Mehadi Aman ◽  
Daichi Koretomo ◽  
Kentaro Masuda ◽  
Kenta Shimpo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

2015 ◽  
Vol 36 (2) ◽  
pp. 105-107 ◽  
Author(s):  
Yi-Ruei Jhan ◽  
Yung-Chun Wu ◽  
Yu-Long Wang ◽  
Yao-Jen Lee ◽  
Min-Feng Hung ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Annealing ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor
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