Low-temperature (150 °C) Processed Metal-Semiconductor Field-Effect Transistor with Hydrogenated In–Ga–Zn–O Stacked Channel
1993 ◽
Vol 64
(10)
◽
pp. 3024-3025
◽
2009 ◽
Vol 48
(7)
◽
pp. 071204
◽
1997 ◽
Vol 36
(Part 1, No. 6B)
◽
pp. 4139-4142
◽
2020 ◽
Vol 59
(SG)
◽
pp. SGGJ04
◽
2015 ◽
Vol 36
(2)
◽
pp. 105-107
◽