Pit Formation Mechanism of Monolayer MoS2 By Thermal Oxidation

2020 ◽  
Vol MA2020-02 (56) ◽  
pp. 3887-3887
Author(s):  
Sangwook Park ◽  
Samira Siahrostami ◽  
Joonsuk Park ◽  
Amir Hassan Bagherzadeh Mostaghimi ◽  
Taeho Roy Kim ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Formation Mechanism ◽  
Monolayer Mos2 ◽  
Pit Formation

Monolayer MoS2 Dendrites on a Symmetry-Disparate SrTiO3 (001) Substrate: Formation Mechanism and Interface Interaction

2016 ◽  
Vol 26 (19) ◽  
pp. 3299-3305 ◽  
Author(s):  
Yu Zhang ◽  
Qingqing Ji ◽  
Jinxiu Wen ◽  
Jiu Li ◽  
Cong Li ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Monolayer Mos2 ◽  
Interface Interaction

Etch-pit formation mechanism induced on HPHT and CVD diamond single crystals by H2 /O2 plasma etching treatment

2012 ◽  
Vol 209 (9) ◽  
pp. 1715-1720 ◽  
Author(s):  
M. Naamoun ◽  
A. Tallaire ◽  
F. Silva ◽  
J. Achard ◽  
P. Doppelt ◽  
...  
Keyword(s):  
Single Crystals ◽  
Formation Mechanism ◽  
Plasma Etching ◽  
Cvd Diamond ◽  
Etch Pit ◽  
Pit Formation ◽  
Diamond Single Crystals ◽  
O2 Plasma

Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption

2016 ◽  
Vol 25 (6) ◽  
pp. 066105 ◽  
Author(s):  
Zhi-Yuan Gao ◽  
Xiao-Wei Xue ◽  
Jiang-Jiang Li ◽  
Xun Wang ◽  
Yan-Hui Xing ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Thermodynamic Equilibrium ◽  
Local Thermodynamic Equilibrium ◽  
Pit Formation

Twin‐White‐Ribbon Effect and Pit Formation Mechanism in PBLOCOS

1991 ◽  
Vol 138 (7) ◽  
pp. 2145-2149 ◽  
Author(s):  
Tin‐hwang Lin ◽  
Nun‐sien Tsai ◽  
Chue‐san Yoo
Keyword(s):  
Formation Mechanism ◽  
Pit Formation

scholarly journals Atomic structure and formation mechanism of sub-nanometer pores in 2D monolayer MoS2

Nanoscale ◽  
2017 ◽  
Vol 9 (19) ◽  
pp. 6417-6426 ◽  
Author(s):  
Shanshan Wang ◽  
Huashan Li ◽  
Hidetaka Sawada ◽  
Christopher S. Allen ◽  
Angus I. Kirkland ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Atomic Structure ◽  
Monolayer Mos2

Formation Mechanism of Metal-Oxides on Plasma-Exposed Wsi/Poly Si Gate Stacks

1999 ◽  
Vol 564 ◽  
Author(s):  
Ziyuan Liu ◽  
Y. Kawashima ◽  
A. Komatsu ◽  
T. Hamada ◽  
H. Kawano ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Thermal Oxidation ◽  
Formation Mechanism ◽  
Plasma Etching ◽  
Oxidation Process ◽  
Etching Process ◽  
Oxygen Impurity ◽  
Gate Stacks ◽  
Tungsten Oxides ◽  
Plasma Etching Process

AbstractThe formation mechanism of deformed tungsten oxides (WOx, x=2,3) on WSix/poly Si gate stacks has been investigated. It was revealed that plasma etching process introduced oxygen impurity into WSix surface and caused the WOx formation during the subsequent thermal oxidation. WSix films preferred corientation were found to be stable in the oxidation process after plasma etching process.

Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas

2013 ◽  
Vol 740-742 ◽  
pp. 161-164 ◽  
Author(s):  
Yukimune Watanabe ◽  
Keisuke Shinoda ◽  
Masahiro Tsukahara ◽  
Hiroyuki Shimada ◽  
Masahiro Furusawa ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
High Vacuum ◽  
Crystal Defects ◽  
Process Time ◽  
Process Conditions ◽  
Si Substrate ◽  
Pit Formation ◽  
Gas Source ◽  
Hydrocarbon Gas ◽  
Low Temperature Process

The formation mechanism of a carbonized layer was investigated under low-pressure and low-temperature process conditions. The initial carbonized layer under those conditions was formed epitaxially using the silicon atoms sublimated from substrate and the carbon atoms of the gas source. This result is suggested from the consideration of pit formation mechanism at the Si/SiC interface. After the initial layer was formed, the carbonized layer grew by the diffusion process of the carbon atoms through the crystal defects in the initially formed layer. This is suggested from that the thickness of the carbonized layer increases linearly with the square root of the process time. The growth rate seemed to be determined by the concentration of carbon atoms taken into the SiC.

Evolution of local strain in Ag-deposited monolayer MoS2 modulated by interface interactions

Nanoscale ◽  
2019 ◽  
Vol 11 (46) ◽  
pp. 22432-22439 ◽  
Author(s):  
Yinghui Sun ◽  
Yan Aung Moe ◽  
Yingying Xu ◽  
Yufei Sun ◽  
Xuewen Wang ◽  
...  
Keyword(s):  
Local Strain ◽  
Monolayer Mos2 ◽  
Interface Interaction

Local strain is best preserved on Al2O3 but relaxed most easily on mica because of the interface interaction from substrates.

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