Mechanisms of Carrier Density Increase of Ternary Cation-Based Amorphous Oxide Semiconductors for Thin Film Transistor Applications

2021 ◽  
Vol MA2021-01 (21) ◽  
pp. 855-855
Author(s):  
Mingyuan Liu ◽  
Molly Rothschild ◽  
Han Wook Song ◽  
Sunghwan Lee
Keyword(s):  
Thin Film ◽  
Carrier Density ◽  
Thin Film Transistor ◽  
Density Increase ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

scholarly journals Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

2013 ◽  
Vol 103 (17) ◽  
pp. 172105 ◽  
Author(s):  
Shinya Aikawa ◽  
Toshihide Nabatame ◽  
Kazuhito Tsukagoshi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

2006 ◽  
Vol 45 (5B) ◽  
pp. 4303-4308 ◽  
Author(s):  
Kenji Nomura ◽  
Akihiro Takagi ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductors ◽  
Amorphous Oxide

scholarly journals Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 462 ◽  
Author(s):  
Seohan Kim ◽  
Doukyun Kim ◽  
Jayoung Byeon ◽  
Jaehong Lim ◽  
Jaeyong Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Phonon Dispersion ◽  
Oxide Semiconductor ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Display Devices ◽  
Amorphous Oxide Semiconductor ◽  
Transparent Display ◽  
Te Material

It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (κ) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (μ) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In−Zn−O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was estimated to have poor κ and high electrical conductivity compared to crystalline In2O3:Sn (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in transparent display devices.

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