Defect Distribution in Doped Silicon Nanostructures Characterized By Means of Scanning Spreading Resistance Microscopy

2021 ◽  
Vol MA2021-01 (34) ◽  
pp. 1097-1097
Author(s):  
Jan Kristen Prüßing ◽  
Tim Böckendorf ◽  
Gerry Hamdana ◽  
Erwin Peiner ◽  
Hartmut Bracht
Keyword(s):  
Silicon Nanostructures ◽  
Defect Distribution ◽  
Spreading Resistance ◽  
Doped Silicon

Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy

2020 ◽  
Vol 127 (5) ◽  
pp. 055703 ◽  
Author(s):  
Jan K. Prüßing ◽  
Tim Böckendorf ◽  
Gerry Hamdana ◽  
Erwin Peiner ◽  
Hartmut Bracht
Keyword(s):  
Silicon Nanostructures ◽  
Defect Distribution ◽  
Spreading Resistance ◽  
Boron Doped ◽  
Doped Silicon

Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)

2014 ◽  
Vol 48 (12) ◽  
pp. 1605-1612 ◽  
Author(s):  
N. T. Bagraev ◽  
R. V. Kuzmin ◽  
A. S. Gurin ◽  
L. E. Klyachkin ◽  
A. M. Malyarenko ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Silicon Nanostructures ◽  
Boron Doped ◽  
Doped Silicon ◽  
Optically Detected

Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study

2013 ◽  
Vol 205-206 ◽  
pp. 311-316 ◽  
Author(s):  
Stefan Kirnstötter ◽  
Martin Faccinelli ◽  
Moriz Jelinek ◽  
Werner Schustereder ◽  
Johannes G. Laven ◽  
...  
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Silicon Wafer ◽  
Induced Current ◽  
Spreading Resistance ◽  
Doped Silicon ◽  
Radiation Induced ◽  
Electron Beam Induced Current ◽  
Induced Defects

Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.

Raman analysis of strain in p-type doped silicon nanostructures

2018 ◽  
Vol 124 (9) ◽  
pp. 095102 ◽  
Author(s):  
Ferran Ureña-Begara ◽  
Renaud Vayrette ◽  
Umesh Kumar Bhaskar ◽  
Jean-Pierre Raskin
Keyword(s):  
Silicon Nanostructures ◽  
Raman Analysis ◽  
Doped Silicon ◽  
P Type

Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures

2008 ◽  
Vol 44 (4-5) ◽  
pp. 337-347 ◽  
Author(s):  
Federico Iori ◽  
Elena Degoli ◽  
M. Palummo ◽  
Stefano Ossicini
Keyword(s):  
Optoelectronic Properties ◽  
Silicon Nanostructures ◽  
Doped Silicon
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