Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study

2013 ◽  
Vol 205-206 ◽  
pp. 311-316 ◽  
Author(s):  
Stefan Kirnstötter ◽  
Martin Faccinelli ◽  
Moriz Jelinek ◽  
Werner Schustereder ◽  
Johannes G. Laven ◽  
...  
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Silicon Wafer ◽  
Induced Current ◽  
Spreading Resistance ◽  
Doped Silicon ◽  
Radiation Induced ◽  
Electron Beam Induced Current ◽  
Induced Defects

Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.

Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

2009 ◽  
Vol 156-158 ◽  
pp. 461-466
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Ryu Hasunuma ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Microscopic Investigation ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Electrical Stress ◽  
High K ◽  
Electron Beam Induced Current ◽  
Induced Defects

We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique

2007 ◽  
Vol 131-133 ◽  
pp. 449-454 ◽  
Author(s):  
Takashi Sekiguchi ◽  
J. Chen ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Naoto Umezawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Hafnium Silicate ◽  
Bright Spots ◽  
High K ◽  
Electron Beam Induced Current ◽  
Induced Defects

We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics of metal-oxide-semiconductor field-effect transistors (MOSFETs) by using electron-beam-induced current (EBIC) method. Leakage sites of p-channel MOSFETs were identified as bright spots under appropriate reverse bias condition when the electron beam energy is high enough to generate carriers in the silicon substrate. Most of the leakage sites were observed in the peripheries of shallow trench isolation. These results suggest that some process induced defects are the cause of leakage in these MOSFETs. Our observation demonstrates the advantage of EBIC characterization for failure analysis of high-k MOSFETs.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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