Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation

2021 ◽  
Vol MA2021-02 (34) ◽  
pp. 990-990
Author(s):  
Zeyu Chen ◽  
Yafei Liu ◽  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Qianyu Cheng ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Lattice Damage

Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation

2021 ◽  
Vol 104 (7) ◽  
pp. 75-83
Author(s):  
Zeyu Chen ◽  
Yafei Liu ◽  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Qianyu Cheng ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Lattice Damage

Characterization of high energy ion implantation into Ti–6Al–4V

2009 ◽  
Vol 389 (2) ◽  
pp. 248-253 ◽  
Author(s):  
M.P. Carroll ◽  
K. Stephenson ◽  
K.O. Findley
Keyword(s):  
Ion Implantation ◽  
High Energy

Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC

1999 ◽  
Vol 85 (1) ◽  
pp. 99-104 ◽  
Author(s):  
F. J. Campos ◽  
N. Mestres ◽  
J. Pascual ◽  
E. Morvan ◽  
P. Godignon ◽  
...  
Keyword(s):  
High Energy ◽  
Lattice Damage ◽  
Raman Characterization

n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

2005 ◽  
Vol 483-485 ◽  
pp. 649-652 ◽  
Author(s):  
Mariaconcetta Canino ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Surface States ◽  
High Energy ◽  
Subsequent Annealing ◽  
Energy Trap ◽  
Implantation Process

n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.

Long Period Gratings in Multimode Fiber Fabricated with High-Energy Ion Implantation

2003 ◽  
Vol 22 (4) ◽  
pp. 225-237
Author(s):  
K. J. GRANT ◽  
ROBERTS A. ◽  
D. N. JAMIESON ◽  
B. ROUT ◽  
C. CHER
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Multimode Fiber ◽  
Long Period ◽  
Long Period Gratings
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