In situ characterization of phase formation during high-energy oxygen ion implantation in molybdenum

2005 ◽  
Vol 240 (1-2) ◽  
pp. 157-161 ◽  
Author(s):  
Y. Bohne ◽  
N. Shevchenko ◽  
F. Prokert ◽  
J. von Borany ◽  
B. Rauschenbach ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Phase Formation ◽  
High Energy ◽  
In Situ Characterization ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

In situ X-ray diffraction investigations during high-energy oxygen ion implantation in transition metals

Vacuum ◽  
2004 ◽  
Vol 76 (2-3) ◽  
pp. 281-285 ◽  
Author(s):  
Y. Bohne ◽  
N. Shevchenko ◽  
F. Prokert ◽  
J. von Borany ◽  
B. Rauschenbach ◽  
...  
Keyword(s):  
Transition Metals ◽  
Ion Implantation ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Microstructural and Compositional Characterization of SiC-On-Insulator Structures

1999 ◽  
Vol 5 (S2) ◽  
pp. 770-771
Author(s):  
Manabu Ishimaru ◽  
Robert M. Dickerson ◽  
Kurt E. Sickafus
Keyword(s):  
Ion Implantation ◽  
Integrated Circuit ◽  
High Speed ◽  
Scanning Transmission Electron Microscope ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Oxygen Ion Implantation

As the size of Si integrated circuit structures is continually reduced, interest in semiconductor-oninsulator (SOI) structures has heightened. SOI structures have already been developed for Si using oxygen ion implantation. However, the application of Si devices is limited due to the physical properties of Si. As an alternative to Si, SiC is a potentially important semiconductor for high-power, high-speed, and high-temperature electronic devices. Therefore, this material is a candidate for expanding the capabilities of Si-based technology. In this study, we performed oxygen ion implantation into bulk SiC to produce SiC-on-insulator structures. We examined the microstructures and compositional distributions in implanted specimens using transmission electron microscopy and a scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (STEM-EDX).Figures 1(a) and 2(a) show bright-field images of 6H-SiC implanted with 180 keV oxygen ions at 650 °C to fluences of 7xl017 and 1.4xl018 cm−2, respectively. Three regions with distinct image contrast are apparent in Figs. 1(a) and 2(a), as indicated by A, B, and C.

scholarly journals In-Situ Characterization of 2-Dim Materials at High Energy and Spatial Resolution

2019 ◽  
Vol 25 (S1) ◽  
pp. 17-18
Author(s):  
Jacob R. Jokisaari ◽  
Jordan Hachtel ◽  
Xuan Hu ◽  
Arijita Mukherjee ◽  
Canhui Wang ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
High Energy ◽  
In Situ Characterization

scholarly journals In situ characterization of residual stress evolution during heat treatment of SiC/SiC ceramic matrix composites using high‐energy X‐ray diffraction

2020 ◽  
Vol 104 (3) ◽  
pp. 1424-1435
Author(s):  
Michael W. Knauf ◽  
Craig P. Przybyla ◽  
Paul A. Shade ◽  
Jun‐Sang Park ◽  
Andrew J. Ritchey ◽  
...  
Keyword(s):  
Ceramic Matrix Composites ◽  
High Energy ◽  
Matrix Composites ◽  
Stress Evolution ◽  
X Ray Diffraction ◽  
In Situ Characterization ◽  
X Ray ◽  
Sic Ceramic

In-situ RBS for oxygen ion implantation systems

2002 ◽  
Author(s):  
M. Farley ◽  
L.P. Alien ◽  
T. Smick ◽  
G. Ryding ◽  
K. Purser
Keyword(s):  
Ion Implantation ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation
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