S63 X-ray Studies of Strained Silicon on Insulator

2008 ◽  
Vol 23 (2) ◽  
pp. 188-188
Author(s):  
M. Bibee ◽  
A. Mehta ◽  
S. Brennan ◽  
P. Pianetta
2019 ◽  
Vol 16 (10) ◽  
pp. 539-543 ◽  
Author(s):  
Takayoshi Shimura ◽  
Tomoyuki Inoue ◽  
Yuki Okamoto ◽  
Takuji Hosoi ◽  
Hiroki Edo ◽  
...  

2013 ◽  
Vol 111 (21) ◽  
Author(s):  
F. Mastropietro ◽  
J. Eymery ◽  
G. Carbone ◽  
S. Baudot ◽  
F. Andrieu ◽  
...  

2011 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
J. Matsui ◽  
Y. Tsusaka ◽  
H. Takano ◽  
Y. Kagoshima ◽  
T. Senda ◽  
...  

Strain in silicon on insulator (SOI) and strained-silicon(s-Si)/silicon–germanium (SiGe)/Si-substrate crystals is analysed by means of synchrotron X-ray microbeam diffraction. It is found that strain features of the s-Si/SiGe/Si crystals are much different from those of SOI crystals from the lattice tilt and lattice parameter distribution points of view. The two-dimensional lattice tilt maps obtained by scanning the synchrotron X-ray microbeam of about 1 μm in size on the sample surface are useful to study local strain distribution in those materials.


2007 ◽  
Vol 90 (17) ◽  
pp. 171919 ◽  
Author(s):  
Conal E. Murray ◽  
M. Sankarapandian ◽  
S. M. Polvino ◽  
I. C. Noyan ◽  
B. Lai ◽  
...  

2005 ◽  
Vol 44 (4B) ◽  
pp. 2336-2339 ◽  
Author(s):  
Yasuyoshi Mishima ◽  
Hirohisa Ochimizu ◽  
Atsushi Mimura

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