Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

1994 ◽  
Vol 38 ◽  
pp. 479-487 ◽  
Author(s):  
O. N. Grigoriev ◽  
S. M. Kushnerenko ◽  
K. A. Plotnikov ◽  
W. Kreher

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

2018 ◽  
Vol 27 (6) ◽  
pp. 096369351802700
Author(s):  
Tao Huang ◽  
Yimin Yao ◽  
Gang Zhang ◽  
Fanling Meng

With the development of polymer-filled composites, the demand of high thermal conductivity materials is much attractive than ever. However, the process of a common method to improve thermal conductivity of composites is considerably complicated. The aim of this study is to investigate thermal conductivity of epoxy filled silver nanoparticle deposited aluminum nitride nanoparticles with relatively convenient process. We found that the thermal conductivities of composites filled with AlN/Ag nanoparticles are effectively enhanced, which is enormously increased from 0.48 Wm-1K-1(1.88 vol%) to 3.66 Wm-1K-1 (19.54 vol%). This can be ascribed to the bridging connections of silver nanoparticle among aluminum nitride nanoparticles. In addition, the thermal contact resistance of the epoxy composites filler with AlN/Ag nanoparticles is decreased, which is proved by the fitting measured thermal conductivity of epoxy composite with one physical model. We believe the finding has great potential for any microelectronic application.


1990 ◽  
Vol 203 ◽  
Author(s):  
Ellice Y. Luh ◽  
Leonard E. Dolhert ◽  
Jack H. Enloe ◽  
John W. Lau

ABSTRACTCharacteristics such as CTE close to that of silicon, high thermal conductivity, and good dielectric properties make aluminum nitride (AIN) an excellent dielectric for packaging silicon-based high density multichip interconnects. However, there remains many aspects of its behavior that have not been characterized. One such example is the behavior of the various metallizations used within a package. As with A12O3, these metallizations must contribute toward a hermetic seal separating the die from the environment. However, the chemical behavior of the metallization systems used for A12O3 may not be compatible with non-oxide ceramics such as AIN. Consequently, these chemical interactions are investigated in view of the requirements for each application within electronic packages. Hermeticity testing results are also included in the discussion.


2019 ◽  
Vol 100 (9) ◽  
Author(s):  
Ting-Han Chou ◽  
Lucas Lindsay ◽  
Alexei A. Maznev ◽  
Jateen S. Gandhi ◽  
Donna W. Stokes ◽  
...  

2020 ◽  
Vol 7 (10) ◽  
pp. 2690-2695
Author(s):  
Jianchao Lin ◽  
Peng Tong ◽  
Xuekai Zhang ◽  
Zichen Wang ◽  
Zhao Zhang ◽  
...  

The electronic entropy enhanced giant barocaloric effect along with high thermal conductivity in hexagonal Ni1−xFexS.


1995 ◽  
Vol 10 (2) ◽  
pp. 247-250 ◽  
Author(s):  
Jyh-Ming Ting ◽  
Max L. Lake

The first use of continuous vapor grown carbon fiber (VGCF) as reinforcement in aluminum metal matrix composite (Al MMC) is reported. Al MMC represents a new material for thermal management in high-power, high-density electronic devices. Due to the ultrahigh thermal conductivity of VGCF, 1950 W/m-K at room temperature, VGCF-reinforced Al MMC exhibits excellent thermal conductivity that cannot be achieved by using any other carbon fiber as reinforcement. An unprecedented high thermal conductivity of 642 W/m-K for Al MMC was obtained by using 36.5% of VGCF.


Author(s):  
Sally A. McMenamin ◽  
Annie Weathers ◽  
Virendra Singh ◽  
Michael T. Pettes ◽  
Baratunde A. Cola ◽  
...  

High thermal conductivity, comparable to that of a metal, has been observed in some stretched polyethylene nanofibers due to a decrease in defect density with the alignment of the polymer chains. Such high thermal conductivity may be useful for thermal management applications such as thermal adhesives made of aligned nanofibers. Polythiophene (Pth) is a conducting polymer that can be synthesized electrochemically as aligned nanofiber forests without the need for stretching individual fibers. Here we report the thermal conductivity of individual suspended Pth nanofibers synthesized electrochemically and measured with the use of a microfabricated device in the temperature range of 80 K to 375 K. The measured thermal conductivity increases with temperature. For three single suspended Pth nanofibers with a diameter on the order of 200 nm, the room temperature value between 0.6 and 0.8 W/m K is about four-fold higher than that reported for Pth thin films and comparable to that reported for binder-filler thermal adhesives.


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