scholarly journals Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 143-146 ◽  
Author(s):  
Carl L. Gardner ◽  
Christian Ringhofer
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Model Simulation ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Model Simulations ◽  
Quantum Hydrodynamic Model ◽  
Tunneling Diode ◽  
Qhd Model ◽  
Quantum Hydrodynamic

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(ℏ2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.

scholarly journals Theory and Simulation of the Smooth Quantum Hydrodynamic Model

VLSI Design ◽  
1999 ◽  
Vol 9 (4) ◽  
pp. 351-355
Author(s):  
Carl L. Gardner
Keyword(s):  
Hydrodynamic Model ◽  
Differential Resistance ◽  
Classical Electron ◽  
Model Simulations ◽  
Quantum Hydrodynamic Model ◽  
Tunneling Diode ◽  
Qhd Model ◽  
Quantum Hydrodynamic ◽  
Quantum Semiconductor ◽  
Classical Hydrodynamic

The “smooth” quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance when compared with simulations using the original O(ħ2) QHD model. In addition, smooth QHD simulations of a classical electron shock wave are presented which agree with classical hydrodynamic model simulations and which do not exhibit the spurious dispersive oscillations of the O(ħ2) QHD model.

scholarly journals Resonant Tunneling in the Quantum Hydrodynamic Model

VLSI Design ◽  
1995 ◽  
Vol 3 (2) ◽  
pp. 201-210 ◽  
Author(s):  
Carl L. Gardner
Keyword(s):  
Quantum Interference ◽  
Resonant Tunneling ◽  
Differential Resistance ◽  
Quantum Hydrodynamic Model ◽  
Tunneling Diode ◽  
Voltage Curve ◽  
Current Voltage Curve ◽  
Multiple Regions ◽  
Qhd Model ◽  
Quantum Hydrodynamic

The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) model for semiconductor devices. Simulations of a parabolic well resonant tunneling diode at 77 K are presented which show multiple regions of negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the QHD equations to show multiple regions of NDR.Resonant tunneling (and NDR) depend on the quantum interference of electron wavefunctions and therefore on the phases of the wavefunctions. An analysis of the QHD equations using a moment expansion of the Wigner-Boltzmann equation indicates how phase information is retained in the hydrodynamic equations.

scholarly journals Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

2020 ◽  
Vol 11 ◽  
pp. 688-694 ◽  
Author(s):  
Majid Sanaeepur
Keyword(s):  
Boron Nitride ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Substitutional Defects ◽  
Boron Nitride Nanoribbons ◽  
Armchair Graphene

A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed. Low-bandgap armchair graphene nanoribbons and high-bandgap armchair boron nitride nanoribbons are used to design the well and the barrier region, respectively. The effect of all possible substitutional defects (including BC, NC, CB, and CN) at the interface of graphene and boron nitride nanoribbons on the negative differential resistance behavior of the proposed resonant tunneling diode is investigated. Transport simulations are carried out in the framework of tight-binding Hamiltonians and non-equilibrium Green’s functions. The results show that a single substitutional defect at the interface of armchair graphene and boron nitride nanoribbons can dramatically affect the negative differential resistance behavior depending on its type and location in the structure.

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