scholarly journals A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 251-256 ◽  
Author(s):  
Wenchao Liang ◽  
Neil Goldsman ◽  
Isaak Mayergoyz
Keyword(s):  
Continuity Equation ◽  
Hole Concentration ◽  
Boltzmann Transport Equation ◽  
Expansion Method ◽  
Boltzmann Transport ◽  
Continuity Equations ◽  
The Poisson Equation ◽  
Self Consistent ◽  
Deterministic Solution ◽  
Hole Current

LDD MOSFET simulation is performed by directly solving the Boltzmann Transport Equation for electrons, the Hole-Current Continuity Equation and the Poisson Equation self-consistently. The spherical harmonic expansion method is employed along with a new Scharfetter-Gummel like discretization of the Boltzmann equation. The solution efficiently provides the distribution function, electrostatic potential, and the hole concentration for the entire 2-D MOSFET.

scholarly journals Self-Consistent Solution of the Multi Band Boltzmann, Poisson and Hole-Continuity Equations

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 257-260
Author(s):  
Surinder P. Singh ◽  
Neil Goldsman ◽  
Isaak D. Mayergoyz
Keyword(s):  
Boltzmann Transport Equation ◽  
The Novel ◽  
Boltzmann Transport ◽  
One Dimensional ◽  
Bipolar Junction Transistor ◽  
Continuity Equations ◽  
The Poisson Equation ◽  
Curvilinear Grid ◽  
Consistent Solution ◽  
Junction Transistor

The Boltzmann transport equation (BTE) for multiple bands is solved by the spherical harmonic approach. The distribution function is obtained for energies greater than 3 eV. The BTE is solved self consistently with the Poisson equation for a one dimensional npn bipolar junction transistor (BJT). The novel features are: the use of boundary fitted curvilinear grid, and Scharfetter Gummel type discretization of the BTE.

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