scholarly journals Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 83-86 ◽  
Author(s):  
J. P. Sun ◽  
G. I. Haddad

We perform a self-consistent calculation of resonant tunneling diode (RTD) I-V characteristics including optical phonon scattering. The self-consistency is obtained by solving the Schrödinger equation and Poisson’s equation iteratively with the Thomas-Fermi approximation used for the device contact regions. For evaluation of phonon-assisted current density, the optical phonon scattering in the quantum well is modeled using the optical model potential. Electron transverse momentum is also incorporated. The calculated current and electron wavefunction illustrate the optical model and effects of the phonon scattering on the current transport. The I-V characteristics we obtain from the model calculation are in good agreement with experimental results. This work manifests the importance of including self-consistency, optical phonon scattering, and electron transverse momentum in modeling realistic RTD structures.

1993 ◽  
Vol 74 (11) ◽  
pp. 6996-6998 ◽  
Author(s):  
Yasuhito Zohta ◽  
Tetsufumi Tanamoto

1989 ◽  
Vol 39 (11) ◽  
pp. 7720-7735 ◽  
Author(s):  
N. C. Kluksdahl ◽  
A. M. Kriman ◽  
D. K. Ferry ◽  
C. Ringhofer

2013 ◽  
Vol 774-776 ◽  
pp. 691-694
Author(s):  
Nai Yun Tang

Influence of polarization effect on current across GaN/AlNresonant tunneling diode (RTD) is simulated by self-consistent calculations ofSchrödinger and Poisson equations. When taking into account polarization chargesat the heterointerface, the band diagram and electronic properties of RTD areobviously changed. As a result, the current-voltage characteristics showsasymmetrical phenomenon. As the polarization effect is enhanced, the resonancepeak is shifted accordingly and even disappears.


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