scholarly journals An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 329-334
Author(s):  
Min Shen ◽  
Wai-Kay Yip ◽  
Ming-C. Cheng ◽  
J. J. Liou
Keyword(s):  
Splitting Method ◽  
Deep Submicron ◽  
Fluid System ◽  
Flux Splitting ◽  
Gaas Mesfet ◽  
Highly Nonlinear ◽  
Submicron Devices ◽  
Efficiency And Effectiveness ◽  
Semiconductor Equations ◽  
Dynamics Problems

The advective upstream splitting method (AUSM) developed for fluid dynamics problems has been applied to solving hydrodynamic semiconductor equations coupled with the Poisson’s equation. In the AUSM, the flux vectors of a fluid system are split into a convective component and a diffusive pressure component. Discretization of these two physically distinct fluxes is thus performed separately in AUSM. Application of the developed hydrodynamic AUSM to a GaAs MESFET with a gate length of 0.1 μm has demonstrated its simplicity, efficiency and effectiveness in dealing with the highly nonlinear hydrodynamic device system.

A low diffusion flux splitting method for inviscid compressible flows

2015 ◽  
Vol 112 ◽  
pp. 83-93 ◽  
Author(s):  
Wenjia Xie ◽  
Hua Li ◽  
Zhengyu Tian ◽  
Sha Pan
Keyword(s):  
Compressible Flows ◽  
Diffusion Flux ◽  
Splitting Method ◽  
Flux Splitting ◽  
Inviscid Compressible Flows

scholarly journals A High-Order Convex Splitting Method for a Non-Additive Cahn–Hilliard Energy Functional

Mathematics ◽  
2019 ◽  
Vol 7 (12) ◽  
pp. 1242 ◽  
Author(s):  
Hyun Geun Lee ◽  
Jaemin Shin ◽  
June-Yub Lee
Keyword(s):  
Splitting Method ◽  
Partition Of Unity ◽  
Energy Functional ◽  
High Order ◽  
Third Order ◽  
Energy Functionals ◽  
Runge Kutta Method ◽  
Highly Nonlinear ◽  
Convex Splitting ◽  
Energy Stable

Various Cahn–Hilliard (CH) energy functionals have been introduced to model phase separation in multi-component system. Mathematically consistent models have highly nonlinear terms linked together, thus it is not well-known how to split this type of energy. In this paper, we propose a new convex splitting and a constrained Convex Splitting (cCS) scheme based on the splitting. We show analytically that the cCS scheme is mass conserving and satisfies the partition of unity constraint at the next time level. It is uniquely solvable and energy stable. Furthermore, we combine the convex splitting with the specially designed implicit–explicit Runge–Kutta method to develop a high-order (up to third-order) cCS scheme for the multi-component CH system. We also show analytically that the high-order cCS scheme is unconditionally energy stable. Numerical experiments with ternary and quaternary systems are presented, demonstrating the accuracy, energy stability, and capability of the proposed high-order cCS scheme.

A flux splitting method for the Baer–Nunziato equations of compressible two-phase flow

2016 ◽  
Vol 323 ◽  
pp. 45-74 ◽  
Author(s):  
S.A. Tokareva ◽  
E.F. Toro
Keyword(s):  
Two Phase Flow ◽  
Splitting Method ◽  
Phase Flow ◽  
Two Phase ◽  
Flux Splitting

Silicidation Strategy Of Sub-0.1 μm Junctions for Deep Submicron Devices

1995 ◽  
Vol 402 ◽  
Author(s):  
Jiunn-Yann Tsai ◽  
Carlton M. Osburn ◽  
Steve L. Hsia
Keyword(s):  
Series Resistance ◽  
Deep Submicron ◽  
Silicon On Insulator ◽  
Promising Alternative ◽  
Resistance Increase ◽  
Low Leakage ◽  
Submicron Devices ◽  
Diffusion Source ◽  
Ultra Shallow Junctions ◽  
Silicon Interface

AbstractTwo major concerns for silicidation of ultra-shallow junctions, namely the silicon-consumption- induced junction leakage and the series resistance increase, were compared among conventional post-junction-silicide (PJS) contact, silicide-as-a-diffusion-source (SADS) contact, Silicon-On-Insulator (SOI) contact, and elevated-source-drain (ESD) contact. Even though we found that ESD contacts would be the ultimate solution for both problems, SOI and SADS contacts provide better resistance to silicon-consumption-induced series resistance increase over conventional PJS contact because both are able to maintain a high dopant concentration at the silicide/silicon interface and thus a low specific contact resistivity. While there is no junction leakage concern for SOI contact, the SADS junction is also distinguished by low leakage owing to its lack of implant damage in the silicon substrate and uniformly doped junction along the silicide/silicon interface contour. MOSFET devices with SADS source/drain were demonstrated with quarter-μm technology. Epitaxial cobalt disilicide (CoSi2) was formed using the Ti/Co bilayer technique as a diffusion source. While both ESD and SOI processes still suffer from process complexity, integration and materials issues, we conclude that SADS contacting is a promising alternative for deep submicron devices.

Suppression of boron diffusion in deep submicron devices

2011 ◽  
Vol 29 (6) ◽  
pp. 062201 ◽  
Author(s):  
Michael A. Gribelyuk ◽  
Phil Oldiges ◽  
Paul A. Ronsheim ◽  
Jun Yuan ◽  
Leon Kimball
Keyword(s):  
Deep Submicron ◽  
Boron Diffusion ◽  
Submicron Devices

scholarly journals A flux-splitting method for hyperbolic-equation system of magnetized electron fluids in quasi-neutral plasmas

2016 ◽  
Vol 310 ◽  
pp. 202-212 ◽  
Author(s):  
Rei Kawashima ◽  
Kimiya Komurasaki ◽  
Tony Schönherr
Keyword(s):  
Hyperbolic Equation ◽  
Splitting Method ◽  
Equation System ◽  
Flux Splitting
Sign in / Sign up

Export Citation Format

Share Document