scholarly journals Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Sung Kim ◽  
Dong Hee Shin ◽  
Dong Yeol Shin ◽  
Chang Oh Kim ◽  
Jae Hee Park ◽  
...  
Keyword(s):  
Recent Progress ◽  
Ion Beam ◽  
Single Layer ◽  
Optoelectronic Device ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
The Past ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Device Applications

During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition ofSiOxsingle layer orSiOx/SiO2multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of SiOxlayers on the luminescence are analyzed in detail and discussed based on possible mechanisms.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Microstructure and Properties of TiAlN/AlN Composite Film Deposited on Cam’s Profile by Ion Beam Sputtering Technique

2010 ◽  
Vol 443 ◽  
pp. 465-468
Author(s):  
Pei Quan Guo ◽  
Shou Ren Wang ◽  
Huan Yong Cui
Keyword(s):  
Composite Film ◽  
Ion Beam ◽  
Temperature Phase ◽  
Ion Beam Sputtering ◽  
Shape Accuracy ◽  
Tem Analysis ◽  
Sputtering Deposition ◽  
Microstructure And Properties ◽  
Operation Temperature ◽  
Beam Sputtering

The study reports a new surface formation technology during manufacturing process of parallel indexing cam mechanism, ion beam sputtering deposition, in which the operation temperature can be controlled below the limitation of phases exchanging or at room temperature. Phase exchanging deformation can be avoided and the shape accuracy and dimension accuracy can be improved compared with surface quenching process. The microstructure and properties of TiAlN/AlN composite film deposited on the profile surface of cam (made of 45 steel) by ion beam sputtering deposition were discussed. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscope (TEM) analysis has been used to characterize film’s microstructure and properties. The micro-hardness and adherence grade were tested.

Ultra-low stress high reflective film by dual-ion-beam sputtering deposition

2021 ◽  
Vol 61 (03) ◽  
Author(s):  
Jinlin Bai ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Lishuan Wang ◽  
Xiao Yang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

The influence of secondary ion beam irradiation on the formation of Si nanocrystals during dual ion beam sputtering

2005 ◽  
Vol 478 (1-2) ◽  
pp. 116-120 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Sputtering ◽  
Ion Beam Irradiation ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Secondary Ion
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