Fabrication and Characterization of Thin Film Solar Cell Made from CuIn0.75Ga0.25S2Wurtzite Nanoparticles

CuIn0.75Ga0.25S2(CIGS) thin film solar cells have been successfully fabricated using CIGS Wurtzite phase nanoparticles for the first time. The structure of the cell is Glass/Mo/CIGS/CdS/ZnO/ZnO:Al/Ag. The light absorption layer is made from CIGS Wurtzite phase nanoparticles that are formed from single-source precursors through a microwave irradiation. The Wurtzite phase nanoparticles were converted to Chalcopyrite phase film through a single-step annealing process in the presence of argon and sulfur at 450°C. The solar cell made from Wurtzite phase nanoparticles showed 1.6% efficiency and 0.42 fill factor.

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Fabrication and characterization of polysilane thin film solar cells

10.7567/ssdm.2012.ps-15-15 ◽

2012 ◽

Author(s):

J. Nakagawa

Keyword(s):

Thin Film ◽

Solar Cells ◽

Thin Film Solar Cells ◽

Fabrication And Characterization

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Fabrication and characterization of Cu(In,Ga)Se2 thin-film solar cells prepared via a solution process

2010 35th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2010.5614669 ◽

2010 ◽

Author(s):

Chung-Hsien Wu ◽

Chung-Hsin Lu

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solution Process ◽

Thin Film Solar Cells ◽

Fabrication And Characterization

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Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

World Journal of Engineering ◽

10.1108/wje-02-2020-0068 ◽

2020 ◽

Vol 17 (4) ◽

pp. 527-533

Author(s):

Mohsen Sajadnia ◽

Sajjad Dehghani ◽

Zahra Noraeepoor ◽

Mohammad Hossein Sheikhi

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Thin Film Solar Cell ◽

Trap Density ◽

Thin Film Solar Cells ◽

Content Type ◽

Cigs Thin Film ◽

Absorbing Layer ◽

Cigs Solar Cells

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

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