scholarly journals Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Ho-Jun Lee ◽  
Jung-Wook Min ◽  
Kye-Jin Lee ◽  
Kwang-Yong Choi ◽  
Jung-Hyun Eum ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Light Output ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Organic Hybrid ◽  
Optical Output ◽  
Chip Processing ◽  
Stable Current

Recent needs of semiconductor lighting sources have pursued diverse functionalities such as flexibility and transparency under high quantum efficiency. Inorganic/organic hybrid light-emitting diodes (LEDs) are one way to meet these requirements. Here, we report on flexible III-nitride-based LEDs and the improvement of their electrical and optical properties. To realize high light emission power and stable current operation, high-quality epitaxy and elaborate chip processing were performed. The fabricated flexible LEDs showed over threefold optical output power compared to normal LEDs on Si and had comparable forward voltage and series resistances.

Realization of Broad-Spectrum Using Chirped Multi-Quantum Well Structures in AlGaInP-Based Light-Emitting Diodes

2021 ◽  
Vol 21 (7) ◽  
pp. 3824-3828
Author(s):  
Hwa Sub Oh ◽  
Jong-Min Park ◽  
Seong Hoon Jeong ◽  
Jun-Beom Park ◽  
Tak Jeong ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Broad Spectrum ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Optical Output ◽  
Multi Quantum Well

We studied broad-spectrum light emitting diodes appropriate for special lighting applications in terms of their optical behaviors and device performances according to the chirped multi-quantum well structures. As the well thickness from 1 st to 3rd well was changed from 6 nm to 15 nm and repeated three times, the electroluminescent spectrum was broadened by 65% and the light output power was increased by 8% in comparison to light emitting diodes having conventional multi-quantum well structures. In the case of the chirped multi-quantum well structures having sequentially decreasing the well thickness from 15 nm to 6 nm and repeating three times, the optical output power was decreased by 5% due to the carrier leakage out of the active region.

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

2009 ◽  
Vol 30 (11) ◽  
pp. 1152-1154 ◽  
Author(s):  
Hung-Wen Huang ◽  
Chung-Hsiang Lin ◽  
Zhi-Kai Huang ◽  
Kang-Yuan Lee ◽  
Chang-Chin Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

2011 ◽  
Vol 1342 ◽  
Author(s):  
Atsushi Nishikawa ◽  
Naoki Furukawa ◽  
Dong-gun Lee ◽  
Kosuke Kawabata ◽  
Takanori Matsuno ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Output Power ◽  
Active Layer ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Active Layer Thickness ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Output Power ◽  
Light Emitting

ABSTRACTWe investigated the electroluminescence (EL) properties of Eu-doped GaN-based light-emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The thickness of the active layer was varied to increase the light output power. With increasing the active layer thickness, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. The applied voltage for the LED operation also increased with the active layer thickness due to an increase in the resistance of the LED. Therefore, in terms of power efficiency, the optimized active layer thickness was around 600 nm. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

2015 ◽  
Vol 15 (4) ◽  
pp. 454-461 ◽  
Author(s):  
Mumta Hena Mustary ◽  
Beo Deul Ryu ◽  
Min Han ◽  
Jong Han Yang ◽  
Volodymyr V. Lysak ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Improved Light Output Power of GaN-based Light Emitting Diodes using Double Photonic Quasi-Crystal Patterned

2009 ◽  
Author(s):  
J. K. Huang ◽  
H. W. Huang ◽  
C. H. Lin ◽  
K. Y. Lee ◽  
C. C. Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes

1990 ◽  
Vol 184 ◽  
Author(s):  
H. S. Hajghassem ◽  
W. D. Brown ◽  
J. R. Yeargan ◽  
J. G. Williams
Keyword(s):  
High Temperature ◽  
Output Power ◽  
Light Emitting Diodes ◽  
Neutron Fluence ◽  
Light Output ◽  
Infrared Light ◽  
High Temperature Annealing ◽  
Light Emitting ◽  
Current Voltage ◽  
Operating Current

ABSTRACTThis paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.

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