Structural and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Kazushi Amanuma ◽  
Takashi Hase ◽  
Yoicht Mtyasaka
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Structural Change ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Sims Analysis ◽  
Film Preparation

ABSTRACTStructural and electrical properties were investigated for chemically prepared SrBi2Ta2O9(SBT) thin films on Pt/Ti/SiO2/Si substrates. Good ferroelectric properties were obtained with a Pt top electrode: Pr=10.0μC/cm2 and Ec-34kV/cm. Au top electrodes resulted in smaller Pr. However, no fatigue was observed up to 109 switching cycles regardless of the top electrode material. Grains were spherical, not columnar, and the average grain size was 200nm. A marked structural change took place in the bottom Pt/Ti electrode during film preparation. The SIMS analysis indicates the reaction between Bi and Pt

FERROELECTRIC PROPERTIES AND INTERFACIAL CHARACTERISTICS OF Ca SUBSTITUTED STRONTIUM BISMUTH TANTALATE THIN FILMS

2005 ◽  
Vol 19 (19) ◽  
pp. 3173-3183
Author(s):  
RASMI R. DAS ◽  
P. BHATTACHARYA ◽  
W. PÉREZ ◽  
RAM S. KATIYAR
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Lattice Mismatch ◽  
Profile Analysis ◽  
Ferroelectric Properties ◽  
Force Microscopy ◽  
Si Substrates ◽  
Thin Film Capacitors ◽  
Average Grain Size

In this study, we have investigated the structural, interfacial and ferroelectric properties of Sr 1-x Ca x Bi 2 Ta 2 O 9 thin films grown on Pt / TiO 2/ SiO 2/ Si substrates using pulsed-laser-deposition technique. The decrease in lattice parameters with increasing Ca content was attributed to the smaller ionic radius of Ca . Atomic force microscopy shows that the average grain size and surface roughness of the films increases with the incorporation of Ca . Films with x=0.2 exhibited a maximum remanent polarization of ~23.8 μ C/cm 2 with a coercive field of 175 kV/cm. The higher remanent polarization was attributed to the increased grain size and to the increase in the lattice mismatch between TaO 2 and SrO planes. The presence of metallic bismuth at the interface of the film and the substrates was confirmed using XPS depth profile analysis. The current transport property of the thin film capacitors suggests a bulk-limited dc-current conduction mechanism.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Laser Irradiation ◽  
Nonlinear Coefficient ◽  
Acceptor State ◽  
Xrd Pattern ◽  
Electrical Studies ◽  
Structural And Electrical Properties

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Influence of Ta2O5, TiO2, and ZrO2 Interfacial Layers on Structural and Electrical Properties of Laser Ablated Ba0.5Sr0.5TiO3 Thin Films

2002 ◽  
Vol 748 ◽  
Author(s):  
Suprem R. Das ◽  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Buffer Layers ◽  
Bst Thin Films ◽  
Interfacial Layers ◽  
Average Grain Size ◽  
Structural And Electrical Properties

ABSTRACTPulsed laser deposition technique was used to fabricate Ba0.5Sr0.5TiO 3 (BST) thin-films on Pt/TiO 2/SiO2/Si substrates. The influence of thin interfacial layers of Ta2O5, TiO2, and ZrO2, on the structural and electrical properties of BST thin films was investigated. Insertion of interfacial layers does not affect the perovskite phase formation of BST thin films. Buffer layers helped to make uniform distribution of grains and resulted in a relative increase in the average grain size. The dielectric tunability of BST thin films was reduced with the presence of buffer layers. A BST thin film having a dielectric permitivity of 470 reduced to 337, 235 and 233 in the presence of Ta2O5, TiO2, and ZrO2 layers, respectively. The reduction of the relative dielectric permittivity of BST films with the insertion of interfacial layers was explained in terms of a series capacitance effect, due to the low dielectric constant of interfacial layers. The TiO2 layer did not show any appreciable change in the leakage current density. Deposition of thin Ta2O5 and ZrO2 interfacial layer on top of Pt reduced the leakage current density by an order of magnitude.

Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
T. Ami ◽  
K. Hironaka ◽  
C. Isobel ◽  
N. Nagel ◽  
M. Sugiyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Type Structure ◽  
Structural And Electrical Properties ◽  
Fluorite Type ◽  
Deposited Films ◽  
Flowing Oxygen

ABSTRACTFerroelectric Bi2 SrTa2 O9 thin films were successfully prepared by liquid delivery MOCVD, and structural and electrical properties were investigated. As-deposited films showed sharp distinct peaks, which were indexed assuming a fluorite-type structure. These precursors were transformed to bismuth-layered structures by annealing at 800 °C in flowing oxygen. Reasonable ferroelectric properties were observed in a film with 170 nm-thickness. Remanent polarization and coercive field were estimated to be 5.2 μC/cm2 and 52 kV/cm, respectively, at 5V.

STRUCTURAL AND ELECTRICAL PROPERTIES OF Nb5+ SUBSTITUTED PZT CERAMICS

2005 ◽  
Vol 19 (30) ◽  
pp. 1783-1791 ◽  
Author(s):  
O. P. THAKUR ◽  
CHANDRA PRAKASH
Keyword(s):  
Grain Size ◽  
Transition Temperature ◽  
Electrical Properties ◽  
Raw Materials ◽  
Pzt Ceramics ◽  
X Ray ◽  
Niobium Doping ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Sample Structure

The effect of niobium doping on the structure and electrical properties with the following compositions Pb ( Zr 0.52 Ti 0.48)1-5X/4 Nb X O 3 with 0<x<0.025 was investigated. The materials were prepared by the usual ceramic technique using high purity raw materials. Disc-shaped samples of each compositions were sintered at 1250°C for 3 hours. The sample structure was determined by X-ray diffractometry. The average grain size, the maximum dielectric permittivity and the remnant polarization first increases up to x = 0.005 concentration of Nb 5+ and then decreases with higher concentration of niobium, while the coercive field does not show any variation. The transition temperature decreases with the increase in niobium concentration.

scholarly journals MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF CDSE THIN FILMS PREPARED BY THERMAL EVAPORATION TECHNIQUE

2021 ◽  
Vol 03 (01) ◽  
pp. 39-44
Author(s):  
Asmaa Natiq Mohammed ALI
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Mean Free Path ◽  
Thermal Evaporation Technique ◽  
Annealing Temperatures ◽  
Average Grain Size ◽  
Evaporation Technique ◽  
Different Thickness

In this work , CdSe thin films with different thickness (100 and 200) nm have been prepared at RT by thermal evaporation technique on glass substrate under vacuum of 10-5 mbar. These films have been annealed to different annealing temperatures (423,473 and523) K. The morphology structure of the films has been examined using atomic force microscope (AFM) analysis. AFM measurements showed that the average grain size values of CdSe thin films decrease with increasing of annealing temperatures from (RT-523K). While the average grain size values increase with increasing thickness. The electrical properties of these films were studied with different thickness and annealing temperature. The d.c. conductivity for all deposited films decreases with increases of annealing temperatures. The electrical activation energies Ea1 and Ea2 found to decrease with increasing of thicknesses. While increase with increasing of annealing temperatures. From Hall effect result, it is found that the carriers concentration increase with increasing of annealing temperatures. While decrease with increasing of thickness. Hall mobility, drift velocity, carrier life time and mean free path decrease with increasing of thickness and annealing temperatures

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