scholarly journals A high-efficiency continuous class-F power amplifier design using simplified real frequency technique

2020 ◽  
Vol 9 (5) ◽  
pp. 1924-1932
Author(s):  
Md. Golam Sadeque ◽  
Zubaida Yusoff ◽  
Mardeni Roslee
Keyword(s):  
Power Amplifier ◽  
Frequency Band ◽  
High Efficiency ◽  
Fourth Generation ◽  
Real Frequency ◽  
Fifth Generation ◽  
Amplifier Design ◽  
4G Wireless ◽  
Frequency Power ◽  
Class F

The fourth-generation (4G) wireless communication has been deployed in many countries. However, there are still some problems such as spectrum crisis due to the increase of wireless mobile devices and servicing. Therefore, the fifth-generation (5G) communication system will be employed at some different spectrum other than 4G frequency band. The radio frequency power amplifier (RFPA) is the key component of the 5G system. In this paper, a broadband continuous class-F (CCF) RFPA is designed for the 5G frequency band from 3.3-4.3 GHz. The input and output matching network are designed using the simplified real frequency technique (SRFT). Using a 10W GaN CGH40010F Cree device, the efficiency of the RFPA achieved greater than 70.7% for the whole frequency band with a maximum of 81.5%. The output power and the gain are more than 40 dBm and 10 dB respectively

scholarly journals Design of High Efficiency Broadband Continuous Class-F Power Amplifier Using Real Frequency Technique With Finite Transmission Zero

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 61983-61993 ◽  
Author(s):  
Zhenxing Yang ◽  
Yao Yao ◽  
Zhongquan Liu ◽  
Mingyu Li ◽  
Tian Li ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Transmission Zero ◽  
Real Frequency ◽  
Class F

High efficiency class-F power amplifier design

2004 ◽  
Author(s):  
Shirt Fun Ooi ◽  
S. Gao ◽  
A. Sambell ◽  
D. Smith ◽  
P. Butterworth
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Amplifier Design ◽  
Class F

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

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