scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design

2001 ◽  
Vol 49 (9) ◽  
pp. 1626-1633 ◽  
Author(s):  
Youngoo Yang ◽  
Young Yun Woo ◽  
Jaehyok Yi ◽  
Bumman Kim
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Large Signal ◽  
Signal Model ◽  
High Power Amplifier ◽  
Amplifier Design

scholarly journals Frequency Selective Degeneration for 6–18 GHz GaAs pHEMT Broadband Power Amplifier Integrated Circuit

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1588
Author(s):  
Sungjae Oh ◽  
Eunjoo Yoo ◽  
Hansik Oh ◽  
Hyungmo Koo ◽  
Jaekyung Shin ◽  
...  
Keyword(s):  
Frequency Response ◽  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Matching Networks ◽  
Chip Size ◽  
Parallel Network ◽  
Frequency Selective

In this paper, a frequency selective degeneration technique using a parallel network with a resistor and capacitor is proposed for a 6–18 GHz GaAs pseudomorphic high electron mobility transistor (pHEMT) broadband power amplifier integrated circuit (PAIC). The proposed degeneration network is applied to the source of the transistor to flatten the frequency response of the transistor in conjunction with feedback and resistor biasing circuits. An almost uniform frequency response was achieved at the wide frequency band through optimizing the values of the capacitor and resistor for the degeneration circuit. Single-section matching networks for small chip sizes were adopted for the two-stage amplifier following the flat frequency characteristics of the degenerated transistor. The proposed broadband PAIC for the 6 to 18 GHz band was fabricated using a 0.15 μm GaAs pHEMT process and had a chip size of 1.03 × 0.87 mm2. The PAIC exhibited gain of 15 dB to 17.2 dB, output power of 20.5 dBm to 22.1 dBm, and linear output power of 11.9 dBm to 13.45 dBm, which satisfies the IMD3 of −30 dBc in the 6–18 GHz band. Flatness for the gain and output power was achieved as ±1.1 dB and ±0.8 dB, respectively.

A Large Signal Model to Improve Linearity of Rf Power Amplifier

2014 ◽  
Vol 519-520 ◽  
pp. 1089-1094
Author(s):  
Shan Wen HU ◽  
Long Xing Shi ◽  
G.P. Li
Keyword(s):  
Power Amplifier ◽  
Transfer Functions ◽  
Phase Variation ◽  
Nonlinear Behavior ◽  
Bipolar Transistors ◽  
Large Signal ◽  
Signal Model ◽  
Rf Power Amplifier ◽  
Proposed Model ◽  
Amplifier Design

Hetero-junction Bipolar Transistors (HBTs) have become very promising devices for power amplifier design in different communication applications. This paper proposes an analytical large signal model to predict nonlinear behavior of InGaP/GaAs HBT. The proposed model is directly fitted from linear model elements using Fourier transfer functions. As a consequence, the proposed large signal model shows good insight of circuit nonlinear behavior, and can be used to analysis large signal parameters of power amplifier. Based on the proposed large signal model, power gain and phase variation of an emitter follower amplify stage under different bias conditions have been analyzed. The calculated results show that: both gain and phase properties exhibit reverse deviation in saturation compared with that in forward amplify region, and can be used to maximize the linearity of power amplifier.

scholarly journals Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer

2017 ◽  
Vol 9 (6) ◽  
pp. 1261-1269 ◽  
Author(s):  
Mhd Tareq Arnous ◽  
Zihui Zhang ◽  
Felix Rautschke ◽  
Georg Boeck
Keyword(s):  
Power Amplifier ◽  
Insertion Loss ◽  
High Power ◽  
Return Loss ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Matching Networks ◽  
Measurement Results ◽  
Saturated Output Power

In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz.

scholarly journals A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

2021 ◽  
Vol 11 (19) ◽  
pp. 9120
Author(s):  
Jihoon Kim
Keyword(s):  
Equivalent Circuit ◽  
Millimeter Wave ◽  
Power Amplifier ◽  
High Electron ◽  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model ◽  
Gan Hemts ◽  
Amplifier Design

A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. In general, GaN HEMTs adopt a source via structure to reduce device degradation due to self-heating. In this paper, the modified drain-source capacitance (Cds) circuit considering the source via structure is proposed. GaN HEMTs fabricated using a commercial 0.15 μm GaN HEMT process are measured with a 67 GHz vector network analyzer (VNA). The fabricated device is an individual source via (ISV) type. As a result, it is difficult to predict the measured S12 in the conventional small-signal model equivalent circuit. This causes errors in maximum stable gain/maximum available gain (MSG/MAG) and stability factor (K), which are important for circuit design. This paper proposes a small-signal equivalent circuit that adds the drain-source inductance to the drain-source capacitance considering the source via structure. The proposed equivalent circuit better reproduces the measured S12 without compromising the accuracy of other S-parameters up to 67 GHz and improves the accuracy of MSG/MAG and K. It is expected that the proposed model can be utilized in a large-signal model for 5G millimeter-wave GaN HEMT power amplifier design in the future.

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