Tunneling Magnetoresistive Heads for Magnetic Data Storage

2007 ◽  
Vol 7 (1) ◽  
pp. 1-12 ◽  
Author(s):  
Sining Mao

Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 ∼ 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the tunneling magnetoresistive heads have become a mainstream technology for the hard disk industry and will still be a technology of choice for future hard disk products.

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 404-408 ◽  
Author(s):  
Richard H. Dee

AbstractBy the end of 2006, the areal density of magnetic recording on tape will approach that seen in hard disk drives of the early to mid-1990s.These operating conditions are reviewed in relation to the operating conditions deemed necessary for the future of magnetic data storage on tape.What results is a clear set of tasks, encompassing both materials and systems architecture issues, to achieve very high-density data storage on magnetic tape, leading to 10 Tbyte tape cartridge capacities and higher.The key to achieving on tape the areal densities of tens to hundreds of Gbit in.2, common in hard disk drives (HDDs), lies primarily in the properties of the medium itself.As for volumetric density of the storage entity, HDDs and tape cartridges are roughly equivalent.The mechanical dimensional uncertainties that accompany the use of flexible, as opposed to rigid, media means that both the mechanical and magnetic properties of materials play a key role in the future of tape.The need for new architectures to overcome the track placement problem that results from increasing track density on flexible media are reviewed, as well as the “particles in a binder” concept that has served so well as the physical basis of tape media over the past 50 years.


COSMOS ◽  
2011 ◽  
Vol 07 (01) ◽  
pp. 25-30
Author(s):  
T. TAHMASEBI ◽  
S. N. PIRAMANAYAGAM

Data storage is one area of technology where nanotechnology has been used even before the term nanotechnology became very popular. The magnetic recording media — the disk that stores information in hard disk drives — used nanotechnology in the late 1990s, in the form of grains which are 15 nm or less in diameter (the grains in current technology are about 8 nm in diameter). The reading sensors of hard disk also make use of thin nanostructures in several dimensions to read information from the recording media. This paper introduces the technology behind the magnetic random access memory and related topics, which form the core of the symposium L of ICMAT 2011, which is titled "Memory, Nanomagnetics, Materials and Devices".


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