Scaling the Dynamic Electron Scattering in Imaging the Graphene Sheets by the High-Angle Annular Dark-Field Microscopy

2012 ◽  
Vol 12 (8) ◽  
pp. 6494-6498
Author(s):  
W. F. Ding ◽  
T. S. Chen ◽  
K. M. Liao ◽  
L. B. He ◽  
F. Q. Song ◽  
...  
1991 ◽  
Vol 238 ◽  
Author(s):  
J. Liu ◽  
Y. Cheng ◽  
G. D. Lewen ◽  
M. B. Stearns

ABSTRACTThe structures of e-beam evaporated Pd/V multilayer thin films, which were fabricated at different substrate temperatures, have been characterized by high-angle annular dark-field microscopy and high resolution electron microscopy techniques. X-ray scattering and crosssectional electron microscopy showed that both the Pd and V layers are composed of small textured crystallites with dominant orientations of Pd (111) and V (110). It is found that Pd/V multilayers with high chemical modulation can be fabricated at substrate temperatures around 350 K and at a deposition rate of 0.2 nm/s. Here high-angle annular dark-field microscopy has been shown to provide direct information about the compositional variation of the interlayers of these ML.


Author(s):  
S. Wang ◽  
J. Liu ◽  
P. R. Buseck ◽  
J. M. Cowley

Franckeite (˜FeSn3Pb5Sb2Si14) has a complex modulated structure containing alternating layers of different composition. The complex composition and structure, lack of a well-defined unit cell, incommensurate character, and poor quality of crystals has made it difficult to study by standard X-ray and electron-diffraction methods. High-angle annular dark-field (HAADF) STEM imaging provides a way of mapping the compositional distributions directly and with atomic resolution. For thin regions of the sample, the intensity of the electrons scattered at high angles depends strongly on the atomic number of the scatterer. This unique property makes HAADF imaging powerful for studying compositional modulations on the atomic scale. By comparing the structure as viewed by high-resolution imaging to the compositional information provided by the HAADF technique, we have been able to obtain an improved understanding of crystal structures with displacive and compositional modulations, such as franckeite. We use the HAADF technique to test the assumption that in franckeite two kinds of layers (SnS2 and PbS) are stacked along the a axis with a 1.73 nm repeat, and that Sb and Fe produce structural modulations in the c direction.


1992 ◽  
Vol 40 (3) ◽  
pp. 352-364 ◽  
Author(s):  
J. Liu ◽  
Y. Cheng ◽  
J.M. Cowley ◽  
M.B. Stearns

1995 ◽  
Vol 80 (11-12) ◽  
pp. 1174-1178 ◽  
Author(s):  
Su Wang ◽  
P. R. Buseck ◽  
J. Liu

2016 ◽  
Vol 169 ◽  
pp. 1-10 ◽  
Author(s):  
Andreas Beyer ◽  
Jürgen Belz ◽  
Nikolai Knaub ◽  
Kakhaber Jandieri ◽  
Kerstin Volz

1996 ◽  
Vol 466 ◽  
Author(s):  
C. B. Boothroyd ◽  
R. E. Dunin-Borkowski ◽  
T. Walther

ABSTRACTWe examine the scattering distribution from thin C, Ge and thick Si specimens as a function of scattering angle and energy loss, in order to gain insight into the relative contributions to both low and high angle annular dark field images from elastically and inelastically scattered elections.


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