Development of p-Type Nano Crystalline Si Film for Electrical Contact Layer with the Front Electrode of Amorphous Silicon Oxide Type Solar Cell

2016 ◽  
Vol 16 (10) ◽  
pp. 10675-10680 ◽  
Author(s):  
Sangho Kim ◽  
S. M Iftiquar ◽  
Jinjoo Park ◽  
Duy Phong Pham ◽  
Chonghoon Shin ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Oxide ◽  
Electrical Contact ◽  
Contact Layer ◽  
Front Electrode ◽  
Nano Crystalline ◽  
Amorphous Silicon Oxide

High-Performance, Tandem-Type Amorphous Silicon Solar Cell

2007 ◽  
Vol 989 ◽  
Author(s):  
Porponth Sichanugrist ◽  
Nirut Pingate ◽  
Channarong Piromjit
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Performance ◽  
Silicon Solar Cell ◽  
Silicon Oxide ◽  
Microcrystalline Silicon ◽  
Cell Efficiency ◽  
Amorphous Silicon Solar Cell ◽  
Amorphous Silicon Oxide

AbstractMicrocrystalline silicon oxide (μc-SiO) deposited from the gas mixture of silane and carbondioxide using VHF plasma was reported by authors to be the promising material for thin-film silicon solar cell fabricated on glass substrate, comparing with the conventional amorphous silicon oxide or microcrystalline silicon p-layer. High-performance, tandem-type solar cell with amorphous and microcrystalline cells (double cells) has been achieved by ap-plying this μc-SiO to the p-layer of both cells.Further work has been extended to a-Si tandem type solar cell with triple cell configu-ration using amorphous silicon oxide (a-SiO), amorphous silicon germanium (a-SiGe) and microcrystalline Si (μc-Si) as the top, middle and bottom cells, respectively. Up to now, cell efficiency of 15.7 % has been achieved using this novel μc-SiO.

scholarly journals Window Layer Thickness Effect on Amorphous Silicon Oxide Solar Cell Performances

2020 ◽  
Vol 2 (01) ◽  
pp. 67-74
Author(s):  
Wafa HADJ KOUIDER ◽  
Abbas BELFAR ◽  
Mohammed BELMEKKI ◽  
Hocine AIT-KACI
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Silicon Oxide ◽  
Hydrogenated Amorphous Silicon ◽  
Window Layer ◽  
Thickness Effect ◽  
Amorphous Silicon Oxide ◽  
Hydrogenated Amorphous

The recent research and developments of a-Si:H based solar cells have greatly promoted its position as low cost solar cell. Unfortunately, a-Si:H solar cells suffer appreciable light induced degradation for thickness greater than 200nm. It has been reported that boron doped hydrogenated amorphous silicon oxide (p-a-SiOx:H) films have a low temperature coefficient compared to those based on hydrogenated amorphous silicon (p-a-Si:H) . Moreover, the solar cells with a p-a-SiOx: H generate more electricity than the solar cells with p-a-Si: H window layer due to the wider band gap (Eg) of these films. We present in this paper a computer simulation on the effects of window layer thickness on the performances of single junction amorphous silicon oxide solar cells. We varied the thickness of the window layer from 5 nm to 25 nm and our simulation results showed that cells parameters are significantly affected window layer thickness. However, the film thickness of the p-a-SiOx:H window layer increased from 5 nm to 25 nm, the power conversion efficiency (PCE) of the solar cells respectively decreased in the ranges of 5.733% to 5.271% .the simulation data are in good agreement with the literature

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