The Magneto Electron Statistics in Heavily Doped N Type-Intrinsic-P Type-Intrinsic Structures

2021 ◽  
Vol 21 (12) ◽  
pp. 6183-6187
Author(s):  
P. K. Das ◽  
J. Pal ◽  
M. Debbarma ◽  
K. P. Ghatak
Keyword(s):  
Magnetic Field ◽  
Band Structure ◽  
Electron Concentration ◽  
Fermi Energy ◽  
Energy Band ◽  
Electronic Materials ◽  
Numerical Magnitudes ◽  
Heavily Doped ◽  
Quantizing Magnetic Field ◽  
P Type

In this paper we study the Electron Statistics in Heavily Doped N Type-Intrinsic-P Type-Intrinsic structures of non-linear optical, tetragonal and opto-electronic materials in the presence of magnetic quantization. It is found taking such heavily doped structures of Cd3As2, CdGeAs2, InAs, InSb, Hg1−xCdxTe, In1−xGaxAsyP1−y as examples that the Fermi energy (EF) oscillates with inverse quantizing magnetic field (1/B) and increases with increasing electron concentration with different numerical magnitudes which is the signature of respective band structure. The numerical value of the Fermi energy is different in different cases due to the different values of the energy band constants.

scholarly journals Влияние квантового магнитного поля на разогрев носителей заряда в чистом Ge

2019 ◽  
Vol 53 (1) ◽  
pp. 13
Author(s):  
В.Ф. Банная ◽  
Е.В. Никитина
Keyword(s):  
Magnetic Field ◽  
Experimental Study ◽  
Charge Carrier ◽  
Electric Field ◽  
Qualitative Agreement ◽  
Carrier Heating ◽  
Electric And Magnetic Fields ◽  
Quantizing Magnetic Field ◽  
P Type ◽  
Charge Carrier Capture

AbstractThe results of an experimental study of charge-carrier heating by an electric field E in pure n - and p -type germanium samples in a quantizing magnetic field H , at E ⊥ H and under carrier photoexcitation conditions, are considered in detail. The results obtained are in qualitative agreement with the predictions of the theory of charge-carrier capture in crossed electric and magnetic fields.

Magnetic-field-induced excitons in photoluminescence from heavily doped p-type Ga1−xAlxAs/GaAs single heterojunction

2004 ◽  
Vol 346-347 ◽  
pp. 442-445
Author(s):  
L. Bryja ◽  
M. Kubisa ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
R. Stȩpniewski ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Heavily Doped ◽  
P Type

The Photoemission from Superlattices of III-V Semiconductors with Graded Interfaces Under Quantizing Magnetic Field

1994 ◽  
Vol 299 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Theoretical Analysis ◽  
Electron Concentration ◽  
Quantum Limit ◽  
Super Lattice ◽  
Dispersion Law ◽  
Magnetic Quantization ◽  
Wide Gap ◽  
Quantizing Magnetic Field

AbstractIn this paper we have studied the photoemission from super-lattices of III-V semiconductors under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb super-lattice with graded interfaces as an example that the photoemission, increases with increasing electron concentration in an oscillatory way and increases with decreasing magnetic field in the magnetic quantum limit. Besides, the photoemission in superlattices is much greater than that of the constituent materials and the well-known results for wide-gap materials have also been obtained from our generalized analysis. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

The Einstein Relation in Superlattices OP Wide-Band Gap Semiconductors Onder Cross-Field Configuration

1992 ◽  
Vol 242 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electron Concentration ◽  
Wide Band ◽  
Field Configuration ◽  
Landau Levels ◽  
Einstein Relation ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Quantizing Magnetic Field

ABSTRACTin this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the for.-ning materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/AÀAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

On the Photoemission from Ternary and Quaternary Alloys Systems Under Strong Magnetic Quantization

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak
Keyword(s):  
Magnetic Field ◽  
Field Dependence ◽  
Electron Concentration ◽  
Magnetic Field Dependence ◽  
Landau Levels ◽  
Ternary Alloys ◽  
Quaternary Alloys ◽  
Quaternary Systems ◽  
Numerical Magnitudes ◽  
Lattice Matched

ABSTRACTWe study the photomission from ternary and quanternary alloys systems by formulating the respective expressions considering the spin & broadening of Landau levels. It is found taking n-Hg1−x CdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples of ternary and quaternary alloys respectively that the photoemission exhibits oscillatory magnetic field dependence and increases with increasing electron concentration in spiky manner for both the cases. The numerical magnitudes of photoemission in ternary alloys are greater than that of the quaternary systems and the theoretical formulations are in agreement with the experimental observations as reported elsewhere.

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